High-performance LED fabrication

ABSTRACT

High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm 2 .

This application is a continuation-in-part of U.S. application Ser. No.14/040,379 filed on Sep. 27, 2013, which is a continuation-in-part ofU.S. application Ser. No. 13/931,359 filed on Jun. 28, 2013, issued asU.S. Pat. No. 8,686,458, which claims the benefit under 35 U.S.C.§119(e) of U.S. Provisional Application No. 61/778,002, filed on Mar.12, 2014, and U.S. application Ser. No. 13/931,359 is a continuation ofU.S. application Ser. No. 12/936,238 filed on Jul. 29, 2011, issued asU.S. Pat. No. 8,502,465, which claims priority to PCT InternationalApplication No. PCT/US2010/49531 filed on Sep. 20, 2010, and whichclaims priority to U.S. Provisional Application No. 61/243,988, filed onSep. 18, 2009; and this application claims the benefit under 35 U.S.C.§119(e) of U.S. Application No. 61/936,000 filed on Feb. 5, 2014; andthis application claims the benefit under 35 U.S.C. §119(e) of U.S.Application No. 61/989,693 filed on May 17, 2014; and this applicationclaims the benefit under 35 U.S.C. §119(e) of U.S. Application No.62/093,855 filed on Dec. 18, 2014, each of which is incorporated byreference in its entirety.

FIELD

The disclosure relates to the field of LED-based lighting systems andmore particularly to techniques for fabricating high-performancelight-emitting diodes.

BACKGROUND

LEDs have been used for illumination products for decades, yet theperformance of such LEDs has stalled, until now. Disclosed herein is ahigh-performance LED that exhibits exceptionally good efficiency whiledelivering extremely high reliability. Various legacy techniques havebeen attempted in an effort to improve efficiency, and reliability, yetsuch legacy techniques have failed to approach the efficiency andreliability of the structures disclosed herein. In addition to detaileddescriptions of the structures that exhibit high efficiency andreliability, details are provided to teach various techniques for makinghigh-performance light-emitting diodes using gallium- andnitrogen-containing materials.

The aforementioned legacy techniques do not reach desired performancelevels for light-emitting diodes, therefore, there is a need forimprovements.

SUMMARY

Accordingly, high-performance light-emitting diodes techniques forfabricating high-performance light-emitting diodes are disclosed.

Embodiments provided by the present disclosure address the challengesthat emerge when creating high performance light-emitting LEDs. Someembodiments address reducing optical losses while addressing electricaldistribution issues and thermal management issues in a singlehigh-performance design. For example, this disclosure teaches techniquesto minimize optical losses at the die and package level (e.g., packagesfor producing white light) while providing high-current electrical powerdistribution and without introducing extra optical losses and whileproviding thermal paths to efficiently remove heat from the differentparts of the system. Some of the embodiments apply flip-chip dietechnologies to form multi-level highly reflective packages that areconfigured to distribute the locations of heat source points so as tofacilitate heat management.

Conventional GaN-based LEDs are fabricated by epitaxial growth of devicelayers on foreign substrates, such as sapphire, Silicon Carbide (SiC),or Silicon (Si). In the case of sapphire, a lateral injection geometryis mandated due to the electrically insulating properties of sapphire.The lateral geometry may be top-emitting, through semi-transparent ohmiccontact metallization, or bottom-emitting (i.e., “Flip-Chip, or FCgeometry). Otherwise, the sapphire substrate may be removed and athin-film approach employed, wherein the epitaxial device layers aretransferred onto a carrier substrate or package element. For Si, forhigh light extraction efficiency, the Si substrate may be removed,mandating a thin-film approach. For SiC, either a lateral or thin-filmapproach is feasible.

For a fixed light output level, the main lever for reducing cost is bydecreasing the LED semiconductor area required for the lighting product.Reducing the total LED chip area effectively increases semiconductormanufacturing plant output, while reducing the size of optics and othercomponents used in final product assembly. Reducing chip size increasescurrent density, but high external quantum efficiency may be maintainedat high current density using epitaxial techniques of the presentdisclosure described below. Chip design also plays a role. Chip sizereduction for lateral chips (either top or substrate emitting) isproblematic as fabrication tolerances can reduce active area utilizationas chip size is reduced. In the case of thin-film LEDs, power densityuniformity is also a challenge.

This effect is illustrated in the embodiments of FIG. 1A through FIG. 1Cand is contrasted in FIG. 2. FIG. 1A illustrates chip size reduction forthin-film lateral injection (e.g., thin-film-flip-chip shown) basedLEDs. FIG. 1B illustrates vertical thin-film based LEDs, and FIG. 1Cillustrates vertical injection bulk-substrate based LEDs.Lateral-injection devices (whether top or bottom contacted) require areafor making both anode and cathode connections on the same side of thedevice. This fundamentally reduces active area utilization (portions ofthe die footprint are required for the cathode) and puts a practicallimit on die size. In addition, for thin-film versions, severe currentcrowding occurs at high current densities, making it difficult to obtainhigh light output from small chips with good efficiency and reliability.What is needed is a technique or techniques to both improve poweruniformity at the same time as reducing light loss. A flip-chiparchitecture exhibiting improved power uniformity and reduced light lossis depicted in FIG. 2 and techniques for how to make and use such aflip-chip LED is discussed herein.

For devices grown on insulating substrates (such as sapphire) orthinned-down devices with only a few μm of GaN, an additional problem iscurrent crowding. Even if the GaN layer is highly doped, electrons willnot spread efficiently at high current density across the lateraldimension of the die. This results in an uneven lateral current profile1600 such as on FIG. 16A, with more electrons injected directly underthe n-contact and fewer electrons father away from the contact. This isundesirable for several reasons; first, regions of higher currentdensity will suffer more droop; second, light is emitted preferentiallyunder the n-contact which may negatively impact light extraction; third,current crowding may negatively impact device reliability.

This disclosure provides a light emitting diode that include a bulkgallium and nitrogen containing substrate with a surface region. One ormore active regions are formed overlying the surface region, with acurrent density of greater than about 175 Amps/cm² characterizing theone or more active regions. The device has an external quantumefficiency (EQE) of 40% (or 50%, 60%, 70%, 80%, 90%) and greater.

In an alternative embodiment, the disclosure provides an alternativetype light emitting diode device, but which also includes a bulk galliumand nitrogen containing substrate and one or more active regions formedoverlying the surface region. The device also has a current density ofgreater than about 200 A/cm² characterizing the active regions, and anemission characterized by a wavelength of 385 nm to 480 nm. In aspecific embodiment, the device has desired red, green, blue, or otheremitting phosphor materials operably coupled to the primary deviceemission to provide a white light source.

In another embodiment, the disclosure provides a light emitting diodedevice with a bulk gallium and nitrogen containing substrate having anon-polar orientation. The device also has active regions formedoverlying the surface region and a current density of greater than about500 A/cm² characterizing the active regions. The device has an emissioncharacterized by a wavelength of 385 nm to 415 nm and one or more RGB orother color phosphor materials operably coupled to the emission toprovide a white light source. In a further specific embodiment, thedevice has a current density of greater than about 500 A/cm²characterizing the active regions and an emission characterized by awavelength of 385 nm to 415 nm.

In further embodiments, the disclosure provides a method of operating alight emitting diode device of the type described above. The methodsubjects the optical device to an electrical current such that ajunction region of the active regions provides a current density ofgreater than about 200 Amps/cm² and outputs electromagnetic radiationhaving wavelengths between 385 nm to 480 nm. The device preferablyincludes a package enclosing at least the bulk gallium and nitrogencontaining substrate and active regions. Preferably, the package ischaracterized by a thermal resistance of 15 or 10 or 5 or 1 degrees perWatt and less.

In certain embodiments, a light emitting diode provided by the presentdisclosure has an external quantum efficiency of at least 40%, at least50%, and/or at least 60%, at a forward current density of at least 175A/cm², at least 200 A/cm², at least 300 A/cm², at least 400 A/cm², atleast 500 A/cm², at least 600 A/cm², at least 700 A/cm², at least 800A/cm², at least 900 A/cm², and/or at least 1,000 A/cm² In certainembodiments, a light emitting diode exhibits any or all of the aboveexternal quantum efficiencies and forward current densities whenoperating at emission wavelengths from 405 nm to 430 nm, from 385 nm to415 nm, from 385 nm to 480 nm, from 390 nm to 430 nm, or others. Thesevalues may apply for all or most of the recited wavelength ranges.

In another embodiment the light emitting diode device has a currentdensity of greater than about 175 Amps/cm² characterizing the one ormore active regions. Additionally, the device has an internal quantumefficiency (IQE) of at least 50%; and a lifetime of at least about 5000hours operable at the current density.

In another embodiment, the bulk gallium and nitrogen containingsubstrate is n-doped. Further, the thickness of the LED can be optimizedas follows:

-   -   1. The LED is formed to be thick enough (e.g., as shown in the        example of FIG. 16B) to enable efficient lateral current        spreading (e.g., see profile 1625) through the substrate and        enable a uniform current density in the active region, across        the device (e.g., across the lateral dimension of the device);        and    -   2. The LED is sufficiently thin that vertical resistance does        not negatively impact its performance.

Still further, the disclosure provides a method for manufacturing alight emitting diode device. The method includes providing a bulkgallium and nitrogen containing substrate having a surface region andforming first epitaxial material over the surface region. The devicealso includes one or more active regions formed overlying the epitaxialmaterial preferably configured for a current density of greater thanabout 175 Amps/cm². The method can also include forming second epitaxialmaterial overlying the active regions and forming contact regions.

The present disclosure provides an LED optical device with an activearea utilization characterizing the active area, which is greater than50%. In other embodiments, the utilization is >80%, >90%, or >95%. Alsothe disclosure enables a device with a ratio characterizing the emittingouter surface area to active region area of greater than 1, and in otherembodiments, the ratio is >5, >10, or >100.

Still further, the present disclosure provides an apparatus, e.g., lightbulb or fixture. The apparatus has one or more LEDs having a cumulativedie surface area of less than about 1 mm² and configured to emit atleast 300 lumens. In a specific embodiment, the LEDs consists of asingle LED fabricated from a gallium and nitrogen containing materialhaving a semipolar, polar, or non-polar orientation. If more than oneLED is provided they are preferably configured in an array.

Typically, the LED has an active junction area of a size with an activejunction area of less than about 1 mm², is less than about 0.75 mm², isless than about 0.5 mm², is less than about 0.3 mm². In a specificembodiment, the apparatus emits at least 300 lumens, at least 500lumens, or at least 700 lumens. In a specific embodiment, the emissionis substantially white light or in ranges of 390-415 nm, 415-440 nm,440-470 nm, and others. In other embodiments, the LED is characterizedby an input power per active junction area of greater than 2 watts/mm²,of greater than 3 watts/mm², of greater than 5 watts/mm², of greaterthan 10 watts/mm², of greater than 15 watts/mm², of greater than 20watts/mm², or others. Depending upon the embodiment, the LED ischaracterized by a lumens per active junction area of greater than 300lm/mm², for a warm white emission with a CCT of less than about 5000Kand CRI of greater than about 75. Alternatively, the LED ischaracterized by a lumens per active junction area of greater than 400lm/mm² for a warm white emission with a CCT of greater than about 5000Kand CRI of greater than about 75. Alternatively, the LEDs ischaracterized by a lumens per active junction area of greater than 600lm/mm²′ for a warm white emission with a CCT of greater than about5,000K and CRI of greater than about 75. Alternatively, the LEDs ischaracterized by a lumens per active junction area of greater than 800lm/mm²′ for a warm white emission with a CCT of greater than about 5000Kand CRI of greater than about 75.

The LEDs described herein can have a current density of greater thanabout 175 Amps/cm² characterizing the active regions and an externalquantum efficiency characterized by a roll off of less than about 5% inabsolute efficiency, as measured from a maximum value compared to thevalue at a predetermined increased operating current density, and anemission characterized by a wavelength of 390 nm to 480 nm.

The present LED is operable at a junction temperature greater than 100°C., greater than 150° C., and/or greater than 200° C., and even higher.In some embodiments, the present device is operable in un-cooled stateand under continuous wave operation. The present LED device also has acurrent density that may range from about 175 A/cm² to about 1 kA/cm² ormore. In one or more embodiments, the current density is also about 400A/cm² to 800 A/cm².

The device and method herein provide for higher yields over conventionaltechniques in fabricating LEDs. In other embodiments, the present methodand resulting structure are easier to form using conventional techniquesand gallium and nitrogen containing substrate materials having polar,non-polar or semipolar surface orientations. The present disclosureprovides a resulting device and method for high current density LEDdevices having smaller feature sizes and substantially no “Droop.” In anexemplary embodiment, the device provides a resulting white lightfixture that uses substantially reduced LED semiconductor area, ascompared to conventional devices. In an exemplary embodiment, thepresent LED active region designs are configured for reducing droop,enabling chip architectures that operate efficiently at high currentdensities.

In a first aspect, light emitting flip-chip on mirror apparatus areprovided comprising an electrically-conductive n-doped bulkGaN-containing substrate; an epitaxially-grown n-type layer overlyingthe substrate; an epitaxially-grown active region overlying theepitaxially-grown n-type layer; an epitaxially-grown p-type layeroverlying the epitaxially-grown active region; an p-contact overlying atleast a portion of the p-type layer; an opening through theepitaxially-grown p-type layer and active region that exposes n-typematerial; an n-contact formed in the opening to provide anelectrically-conductive path to the substrate; a submount comprising, atleast a first conductive lower mirror region and a second conductivelower mirror region to provide separate electrical connection to then-contact and p-contact; an insulating layer; a third mirror regionoverlying a gap between the first conductive lower mirror region and thesecond conductive lower mirror to provide a higher reflectivity than thesubmount; a first metal containing composition in direct contact with atleast a portion of the first lower mirror region and in electricalcontact with the p-contact, and a second metal containing composition indirect contact with at least a portion of the second lower mirror regionand in electrical contact with the n-contact.

In a second aspect, lighting systems are provided comprising a basemember configurable to provide an electrical connection to a powersource; at least one light emitting diode die, electrically connected tothe power source comprising: an electrically-conductive n-doped bulkGaN-containing substrate that is greater than or equal to 20 micronsthick; an epitaxially-grown n-type layer overlying the substrate; anepitaxially-grown active region overlying the epitaxially-grown n-typelayer; an epitaxially-grown p-type layer overlying the epitaxially-grownactive region; an p-contact overlying at least a portion of the p-typelayer; an opening through the epitaxially-grown p-type layer and activeregion that exposes n-type material; an n-contact formed in the openingto provide an electrically-conductive path to the substrate; a submountcomprising, at least a first conductive lower mirror region and a secondconductive lower mirror region to provide separate electrical connectionto the n-contact and p-contact; an insulating layer; a third mirrorregion overlying a gap between the first conductive lower mirror regionand the second conductive lower mirror to provide a higher reflectivitythan the submount; a first metal containing composition in directcontact with at least a portion of the first lower mirror region and inelectrical contact with the p-contact, and a second metal containingcomposition in direct contact with at least a portion of the secondlower mirror region and in electrical contact with the n-contact.

A further understanding of the nature and advantages of the presentdisclosure may be realized by reference to the specification andattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

Those skilled in the art will understand that the drawings, describedherein, are for illustration purposes only. The drawings are notintended to limit the scope of the present disclosure.

FIG. 1A, FIG. 1B, and FIG. 1C present illustrations of several chiparchitectures.

FIG. 2 illustrates active area utilization (ratio of active area todevice footprint) as a function of chip width for lateral chip designscompared with other designs, assuming lithography tolerances of 5 μm, adie-attach tolerance of 25 μm, and a bump diameter of 75 μm.

FIG. 3 shows a sample plot of relative luminous flux as a function ofinjection current for a conventional LED, a Cree XP-E white LED withjunction temperature of 25° C.

FIG. 4A shows an external quantum efficiency as a function of currentdensity for (a) a multiple quantum well LED with two 2.5 nanometerwells, (b) a multiple quantum well LED with six 2.5 nanometer quantumwells, and (c) a double heterostructure LED with a 13 nanometer activeregion. Each of the LEDs exhibited emission at ˜430 nm.

FIG. 4B illustrates quantum efficiency plotted against current densityfor LED devices according to an embodiment of the present disclosure andcompared to prior art devices.

FIG. 5A is a diagram of a high current density epitaxially grown LEDstructure according to an embodiment.

FIG. 5B is a flow diagram of an epitaxial deposition process accordingto one or more some embodiments.

FIG. 6 is a diagram illustrating a high current density LED structurewith electrical connections according to an embodiment.

FIG. 7 is a diagram of a bottom-emitting lateral conducting high currentdensity LED device according to an embodiment.

FIG. 8 is a diagram of a bottom-emitting vertically conducting highcurrent density LED according to a specific embodiment of the presentdisclosure.

FIG. 9 is an example of a packaged white LED containing a high currentdensity LED device according to an embodiment.

FIG. 10A shows the LED power conversion, or “wall-plug”, efficiency ofLEDs based on the present invention, compared to standard LEDs, as afunction of forward current density.

FIG. 10B shows the LED external quantum efficiency of LEDs based on thepresent invention, compared to standard LEDs, as a function of peakemission wavelength.

FIG. 11 shows a typical derating that is performed for LEDs that areinserted into an SSL lamp.

FIG. 12 shows LED MR16 lamp center beam candle power (CBCP), in candela,for a bulk-GaN based LEDs compared to that achievable using conventionalLEDs.

FIG. 13 is a summary of lumen/mm² for conventional LEDs compared tocertain embodiments of the present disclosure at 350 mA drive current.

FIG. 14 is a summary of lumen/mm² for conventional LEDs compared tocertain embodiments of the present disclosure at 700 mA drive current.

FIG. 15 is a summary of lumen/mm² for conventional LEDs compared tocertain embodiments of the present disclosure at 1,000 mA drive current.

FIG. 16A is a cross-section of a thin-film LED with arrows of varyingthicknesses showing the flow of electrons and holes.

FIG. 16B is a cross-section of a thick LED with a doped substrate, witharrows showing the flow of electrons and holes, according to anembodiment.

FIGS. 17A and 17B depict top views of LEDs, according to someembodiments.

FIG. 18 is a plot of the lateral and vertical resistance in an LED as afunction of its aspect ratio.

FIG. 19A is a microscope image of a lit-up LED according to anembodiment.

FIG. 19B is a cross-section of an LED and shows the light intensityprofile across an LED according to an embodiment.

FIG. 19C is a side view of a flip-chip LED device.

FIG. 19D plots simulation results for comparison.

FIG. 19E1 depicts current crowding in various regions of an LED die aspredicted by simulations.

FIG. 19E2 depicts current crowding in various regions of an LED die aspredicted by simulations.

FIG. 19F depicts a plot showing measured performance of a device with athick conductive GaN substrate.

FIG. 19G1 and FIG. 19G2 show the forward voltage (Vf), and wall plugefficiency (WPE) respectively as a function of resistivity of the n-typeGaN substrate.

FIG. 19H1 and FIG. 19H2 show the two-dimensional current density map andcross section of the current density when the resistivity of the n-GaNsubstrate is 1E-2 Ohm cm with a thick n-GaN substrate (˜150 μm).

FIG. 19I1 and FIG. 19I2 show the two-dimensional current density map andcross section of the current density when the resistivity of the n-GaNsubstrate is 1E-1 Ohm cm with a thick n-GaN substrate (˜150 μm).

FIG. 20A1 is a side view of a LED subassembly 1A100 with flip-chip stylecontacts to a high-performance light-emitting diode, according to someembodiments.

FIG. 20A2 is a side view of a LED subassembly 1A200 with a wire-bondcontact to a high-performance light-emitting diode, according to someembodiments.

FIG. 20B shows electrically isolated mirror segments covered by atransparent dielectric layer to protect the mirror from chemical attackand permit maximum reflectance from the mirror, according to someembodiments.

FIG. 20C shows a transparent dielectric layer to encapsulate the mirrorsegments and electrically isolate the mirror segments for forming asubmount used in fabricating a high-performance light-emitting diode,according to some embodiments.

FIG. 20D shows a patterned upper mirror segment with a protectivedielectric coating to reflect light that would otherwise pass betweenlower mirror segments as used in fabrication of a high-performancelight-emitting diode, according to some embodiments.

FIG. 20E shows another transparent dielectric layer to encapsulate theupper mirror segments and etched holes for electrical contacts to thelower mirror segments as used in a submount for a high-performancelight-emitting diode, according to some embodiments.

FIG. 21A shows a submount subassembly having a seed layer patternedbefore depositing the metal mirror stack and exposed for plating byetching to form a submount, according to some embodiments.

FIG. 21B shows a patterned plating seed layer used to facilitate contactformation with a plating process as used to form a submount for ahigh-performance light-emitting diode, according to some embodiments.

FIG. 21C shows a patterned mirror and protective dielectric segmentscovering the seed layer to prevent light from being absorbed in the seedlayer, according to some embodiments.

FIG. 21D shows a patterned upper mirror segment with protectivedielectric coating to reflect light that would otherwise pass betweenlower mirror segments. It also illustrates a transparent dielectriclayer to encapsulate the lower mirror segments and isolate them from theupper mirror segments, according to some embodiments.

FIG. 22A depicts a submount subassembly having a plating seed layer anda metal mirror stack deposited and patterned in contemporaneous stepsand the final plated pad, according to some embodiments.

FIG. 22B1 shows patterned segments consisting of a plating seed layer, ametal mirror stack, and a transparent protective dielectric coating,according to some embodiments.

FIG. 22B2 shows patterned segments consisting of a metal mirror stack,and a transparent protective dielectric coating, according to someembodiments.

FIG. 22C shows a patterned upper mirror segment with protectivedielectric coating to reflect light that would otherwise pass betweenlower mirror segments, according to some embodiments.

FIG. 23A shows a submount wherein the metal mirror is made discontinuousby a deposition over a self-aligned dielectric pillar, according to someembodiments.

FIG. 23B shows layers of the dielectric pillar prior to etching,according to some embodiments.

FIG. 23C shows an etched dielectric pillar with the middle layerundercut by the etching process to create a break in the subsequentmetal mirror stack, according to some embodiments.

FIG. 23D shows a metal mirror stack that is deposited using adirectional process so the sidewall of the dielectric pillar is notcoated, according to some embodiments.

FIG. 23E shows a transparent dielectric film encapsulating the metalmirror stack to protect it against chemical attack, according to someembodiments.

FIG. 24 shows a submount where the seed layer and metal mirror stack aredeposited and patterned in contemporaneous steps and over which isdeposited dielectric mirror segments, according to some embodiments.

FIG. 25 shows a submount where the plating seed layer is patternedbefore depositing the metal mirror stack and over which is deposited adielectric mirror for fabricating a high-performance light-emittingdiode, according to some embodiments.

FIG. 26 shows a submount where the seed layer and metal mirror stack aredeposited and patterned in contemporaneous steps, according to someembodiments.

FIG. 27 shows a submount where the plating seed layer is patternedbefore depositing the metal mirror stack and over which is depositedboth a transparent dielectric layer and a dielectric mirror, accordingto some embodiments.

FIG. 28 is a flow chart of a process flow for assembly of a submount asused in fabricating a high-performance light-emitting diode, accordingto some embodiments.

FIG. 29A depicts an epitaxially-formed LED atop a highly-reflectivesubmount to fabricate a high-performance light-emitting diode, accordingto some embodiments.

FIG. 29B depicts an epitaxially-formed LED atop a highly-reflectivesubmount to fabricate a high-performance light-emitting diode, accordingto some embodiments.

FIG. 30 depicts an epitaxially-formed LED structure prior to formingohmic contacts to fabricate a high-performance light-emitting diode,according to some embodiments.

FIG. 31 depicts ohmic contacts deposited atop an epitaxially-formed LEDstructure as used in fabricating a high-performance light-emittingdiode, according to some embodiments.

FIG. 32 depicts an LED structure having a dielectric film as used infabricating a high-performance light-emitting diode, according to someembodiments.

FIG. 33 depicts an LED structure after etching through the dielectricfilm to expose GaN as used in fabricating a high-performancelight-emitting diode, according to some embodiments.

FIG. 34 depicts isolated LED devices, according to some embodiments.

FIG. 35 depicts n-contacts deposited on the gallium face of ahigh-performance light-emitting diode, according to some embodiments.

FIG. 36 shows a passivating dielectric film deposit deposited over thewafer, according to some embodiments.

FIG. 37A shows areas of a dielectric film that are etched to exposen-contacts and p-contacts, according to some embodiments.

FIG. 37B is a side view showing dewetting layer atop the n-contact of ahigh-performance light-emitting diode, according to some embodiments.

FIG. 37C and FIG. 37D depict solder deposition and melting, according tosome embodiments.

FIG. 38 shows solder deposits deposited on contacts of ahigh-performance light-emitting diode, according to some embodiments.

FIG. 39 shows results of substrate thinning to form a high-performancelight-emitting diode, according to some embodiments.

FIG. 40A is a flow chart of a process flow for assembling ahigh-performance light-emitting diode, according to some embodiments.

FIG. 40B is a flow chart of a process flow for assembling ahigh-performance light-emitting diode, according to some embodiments.

FIG. 41 depicts the results of a solder reflow process as used inassembling a high-performance light-emitting diode, according to someembodiments.

FIG. 42 depicts a die design with an edge corner n-contact for forming ahigh-performance light-emitting diode, according to some embodiments.

FIG. 43 depicts a die design with an edge corner n-contact and a centralbus bar for forming a high-performance light-emitting diode, accordingto some embodiments.

FIG. 44 depicts a die design with an edge corner n-contact and a bus baralong one edge for forming a high-performance light-emitting diode,according to some embodiments.

FIG. 45 depicts a die design with an edge corner n-contact and two busbars along two edges for forming a high-performance light-emittingdiode, according to some embodiments.

FIG. 46 depicts a die design with a single edge corner n-contact and abus bar ring for forming a high-performance light-emitting diode,according to some embodiments.

FIG. 47 depicts a die design with a double corner n-contact for forminga high-performance light-emitting diode, according to some embodiments.

FIG. 48 depicts a rhombus die design with a single corner n-contact forforming a high-performance light-emitting diode, according to someembodiments.

FIG. 49 depicts a rectangular die design with respective variations ofn-contact and p-contact patterns for forming a high-performancelight-emitting diode, according to some embodiments.

FIG. 50 depicts a subassembly comprising a highly thermally conductive,electrically isolated mirror submount with buried routing traces for useas a submount for a high-performance light-emitting diode, according tosome embodiments.

FIG. 51 depicts a series of steps of a fabrication process for forming athermally conductive and highly reflective submount having buriedrouting traces for use in assembling a high-performance light-emittingdiode, according to some embodiments.

FIG. 52 depicts a series of steps of a fabrication process for forming athermally conductive and highly reflective submount having buriedrouting traces for use in assembling a high-performance light-emittingdiode, according to some embodiments.

FIG. 53 depicts a series of steps of a fabrication process for forming athermally conductive and highly reflective submount having buriedrouting traces for use in assembling a high-performance light-emittingdiode, according to some embodiments.

FIG. 54 depicts a series of steps of a fabrication process for forming athermally conductive and highly reflective submount having buriedrouting traces for use in assembling a high-performance light-emittingdiode, according to some embodiments.

FIG. 55 depicts a series of steps of a fabrication process for forming athermally conductive and highly reflective submount having buriedrouting traces for use in assembling a high-performance light-emittingdiode, according to some embodiments.

FIG. 56 depicts a series of steps of a fabrication process for forming athermally conductive and highly reflective submount having buriedrouting traces for use in assembling a high-performance light-emittingdiode, according to some embodiments.

FIG. 57 is a flow chart of a process flow for forming a thermallyconductive and highly reflective submount having buried routing tracesfor use in assembling a high-performance light-emitting diode, accordingto some embodiments.

FIG. 58 plots reflectivity versus wavelength, according to someembodiments.

FIG. 59 plots normal incidence reflectivity versus wavelength, accordingto some embodiments.

FIG. 60 plots angle-dependent reflectivity versus angle, according tosome embodiments.

FIG. 61 plots transverse magnetic polarized light reflectivity of astack as a function of angle and wavelength, according to someembodiments.

FIG. 62 plots transverse magnetic polarized light reflectivity of astack as a function of angle and wavelength, according to someembodiments.

FIG. 63 plots reflectivity as a function of angle and wavelength,according to some embodiments.

FIG. 64 plots reflectivity as a function of angle and wavelength,according to some embodiments.

FIG. 65 illustrates the performance of various silver-dielectric stackdesigns, according to some embodiments.

FIG. 66 plots some light trajectories, according to some embodiments.

FIG. 67 illustrates the performance of different dielectric stacks,according to some embodiments.

FIG. 68 depicts a submount configuration, according to some embodiments.

FIG. 69A through FIG. 69I depict lamp system embodiments, according tosome embodiments.

FIG. 70A1 through FIG. 70I depict light emitting diodes as appliedtoward lighting applications, according to some embodiments.

FIG. 71 depicts a side view of a flip-chip on mirror configuration,according to some embodiments.

DETAILED DESCRIPTION

The term “exemplary” is used herein to mean serving as an example,instance, or illustration. Any aspect or design described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other aspects or designs. Rather, use of the wordexemplary is intended to present concepts in a concrete fashion.

The term “or” is intended to mean an inclusive “or” rather than anexclusive “or”. That is, unless specified otherwise, or is clear fromthe context, “X employs A or B” is intended to mean any of the naturalinclusive permutations. That is, if X employs A, X employs B, or Xemploys both A and B, then “X employs A or B” is satisfied under any ofthe foregoing instances. In addition, the articles “a” and “an” as usedin this application and the appended claims should generally beconstrued to mean “one or more” unless specified otherwise or is clearfrom the context to be directed to a singular form.

The term “logic” means any combination of software or hardware that isused to implement all or part of the disclosure.

The term “non-transitory computer readable medium” refers to any mediumthat participates in providing instructions to a logic processor.

A “module” includes any mix of any portions of computer memory and anyextent of circuitry including circuitry embodied as a processor.

The compositions of matter referred to in the present disclosurecomprise various compositions of matter. The compositions ofwavelength-converting materials referred to in the present disclosurecomprise various wavelength-converting materials.

Wavelength conversion materials can be crystalline (single or poly),ceramic or semiconductor particle phosphors, ceramic or semiconductorplate phosphors, organic or inorganic downconverters, upconverters(anti-stokes), nano-particles and other materials which providewavelength conversion. Major classes of downconverter phosphors used insolid-state lighting include garnets doped at least with Ce³⁺;nitridosilicates, oxynitridosilicates or oxynitridoaluminosilicatesdoped at least with Ce³⁺; chalcogenides doped at least with Ce³⁺;silicates or fluorosilicates doped at least with Eu²⁺; nitridosilicates,oxynitridosilicates, oxynitridoaluminosilicates or sialons doped atleast with Eu²⁺; carbidonitridosilicates or carbidooxynitridosilicatesdoped at least with Eu²⁺; aluminates doped at least with Eu²⁺;phosphates or apatites doped at least with Eu²⁺; chalcogenides doped atleast with Eu²⁺; and oxides, oxyfluorides or complex fluorides doped atleast with Mn⁴⁺. Some specific examples are listed below:(Ba,Sr,Ca,Mg)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺(Ca,Sr,Ba)₃MgSi₂O₈:Eu²⁺,Mn²⁺(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺(Na,K,Rb,Cs)₂[(Si,Ge,Ti,Zr,Hf,Sn)F₆]:Mn⁴⁺(Mg,Ca,Zr,Ba,Zn)[(Si,Ge,Ti,Zr,Hf,Sn)F₆]:Mn⁴⁺(Mg,Ca,Sr,Ba,Zn)₂SiO₄:Eu²⁺(Sr,Ca,Ba)(Al,Ga)₂S₄:Eu²⁺(Ca,Sr)S:Eu²⁺,Ce³⁺(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Sc,Al,Ga)₅O₁₂:Ce³⁺

The group:Ca_(1−x)Al_(x−xy)Si_(1−x+xy)N_(2−x−xy)C_(xy):A  (1);Ca_(1−x−z)Na_(z)M(III)_(x−xy−z)Si_(1−x+xy+z)N_(2−x−xy)C_(xy):A  (2);M(II)_(1−x−z)M(I)_(z)M(III)_(x−xy−z)Si_(1−x+xy+z)N_(2−x−xy)C_(xy):A  (3);M(II)_(1−x−z)M(I)_(z)M(III)_(x−xy−z)Si_(1−x+xy+z)N_(2−x−xy−2w/3)C_(xy)O_(w−v/2)H_(v):A  (4);andM(II)_(1−x−z)M(I)_(z)M(III)_(x−xy−z)Si_(1−x+xy+z)N_(2−x−xy−2w/3−v/3)C_(xy)O_(w)H_(v):A  (4a),

where 0<x<1, 0<y<1, 0≦z<1, 0≦v<1, 0<w<1, x+z<1, x>xy+z, and 0<x−xy−z<1,M(II) is at least one divalent cation, M(I) is at least one monovalentcation, M(III) is at least one trivalent cation, H is at least onemonovalent anion, and A is a luminescence activator doped in the crystalstructure.Ce_(x)(Mg,Ca,Sr,Ba)_(y)(Sc,Y,La,Gd,Lu)_(1−x−y)Al(Si_(6−z+y)Al_(z−y))(N_(10−z)O_(z))(where x,y<1, y≧0 and z˜1)(Mg,Ca,Sr,Ba)(Y,Sc,Gd,Tb,La,Lu)₂S₄:Ce³⁺(Ba,Sr,Ca)_(x) xSi_(y)N_(z):Eu2+ (where 2x+4y=3z)(Y,Sc,Lu,Gd)_(2−n)Ca_(n)Si₄N_(6+n)C_(1−n):Ce³⁺, (where 0≦n≦0.5)(Lu,Ca,Li,Mg,Y) alpha-SiAlON doped with Eu²⁺ and/or Ce³⁺(Ca,Sr,Ba)SiO₂N₂:Eu²⁺,Ce³⁺(Sr,Ca)AlSiN₃:Eu²⁺CaAlSi(ON)₃:Eu²⁺(Y,La,Lu)Si₃N₅:Ce³⁺ and(La,Y,Lu)₃Si₆N₁₁:Ce³⁺.

For purposes of the application, it is understood that when a phosphorhas two or more dopant ions (i.e. those ions following the colon in theabove phosphors), this is to mean that the phosphor has at least one(but not necessarily all) of those dopant ions within the material. Thatis, as understood by those skilled in the art, this type of notationmeans that the phosphor can include any or all of those specified ionsas dopants in the formulation. Further, it is to be understood thatnanoparticles, quantum dots, semiconductor particles, and other types ofmaterials can be used as wavelength converting materials. The list aboveis representative and should not be taken to include all the materialsthat may be utilized within embodiments described herein.

This disclosure relates generally to lighting techniques, and inparticular to techniques for high current density LED devices fabricatedon bulk gallium and nitrogen containing polar, semipolar or nonpolarmaterials. The disclosure can be applied to lighting systems and tolighting applications such as white lighting, multi-colored lighting,flat panel display lighting, other optoelectronic devices, and similarillumination products.

The disclosure herein relates to making and using a light emitting diodedevice emitting at a wavelength of 390 nm to 470 nm or at a wavelengthof 405 nm to 430 nm. Some of the disclosed embodiments address thedesirability of uniform current density across the active region, andsome of the device embodiments comprise a bulk gallium and nitrogencontaining substrate with a growth to form an active region. Exemplarydevices are characterized by having a geometric relationship (e.g.,aspect ratio) between a lateral dimension of the device and a verticaldimension of the device such that the geometric aspect ratio forms avolumetric LED that delivers a substantially flat current density acrossthe device (e.g., as measured across a lateral dimension of the activeregion). Moreover, exemplary devices are characterized by having acurrent density in the active region of greater than about 175 Amps/cm².

The herein-disclosed breakthroughs in the field of GaN-basedoptoelectronics have demonstrated the great potential of devicesfabricated on bulk polar, nonpolar and semipolar GaN substrates. For anysurface orientation, the bulk native substrate provides for simplifieddevice geometry that may be scaled down to provide lower costs (indollars per lumen) compared to approaches based on foreign substrateslike sapphire SiC, or Si. Furthermore, the reduced dislocation densitiesprovided by bulk GaN offer assurance of high reliability at high currentdensities, which is not guaranteed by foreign substrate approaches.

An LED may be fabricated on a bulk gallium nitride substrate. Thegallium nitride substrate may be sliced from a boule that was grown byhydride vapor phase epitaxy or ammonothermally, or via a flux method, orother methods. In one specific embodiment, the gallium nitride substrateis fabricated by a combination of hydride vapor phase epitaxy andammonothermal growth, as disclosed in U.S. Patent Application No.61/078,704, filed on Jul. 7, 2008, which is incorporated by reference inits entirety. The boule may be grown in the c-direction, them-direction, the a-direction, or in a semi-polar direction on asingle-crystal seed crystal. Semipolar planes may be designated by(hkil) Miller indices, where i=−(h+k), l is nonzero and at least one ofh and k are nonzero. The gallium nitride substrate may be cut, lapped,polished, and chemical-mechanically polished. The gallium nitridesubstrate orientation may be within ±5 degrees, ±2 degrees, ±1 degree,or ±0.5 degrees of the {0001} c plane, the {1 −1 0 0} m plane, the {1 1−2 0} a plane, the {1 1 −2 2} plane, the {2 0 −2 ±1} plane, the {1 −1 0±1} plane, the {1 0 0 −1 ±1} plane, the {1 −1 0 −±2} plane, or the {1 −10 ±3} plane. The gallium nitride substrate may have a dislocationdensity in the plane of the large-area surface that is less than 10⁶cm⁻², less than 10⁵ cm⁻², less than 10⁴ cm⁻², or less than 10³ cm⁻².

An LED is fabricated on the gallium nitride substrate according tomethods that are known in the art, for example, following the methodsdisclosed in U.S. Pat. No. 7,053,413, and U.S. Application PublicationNo. 2013/0075770 each of which is incorporated by reference in itsentirety. At least one Al_(x)In_(y)Ga_(1−x−y)N layer, where 0≦x≦1,0≦y≦1, and 0≦x+y≦1, is deposited on the substrate, for example,following the methods disclosed by U.S. Pat. Nos. 7,338,828 and7,220,324, which are hereby incorporated by reference in their entirety.The at least one Al_(x)In_(y)Ga_(1−x−y)N layer may be deposited bymetal-organic chemical vapor deposition, by molecular beam epitaxy, byhydride vapor phase epitaxy, or by a combination thereof. In oneembodiment, the Al_(x)In_(y)Ga_(1−x−y)N layer comprises an active layerthat preferentially emits light when an electrical current is passedthrough it. In one specific embodiment, the active layer comprises asingle quantum well, with a thickness between about 0.5 nm and about 40nm. In a specific embodiment, the active layer comprises a singlequantum well with a thickness between about 1 nm and about 5 nm. Inother embodiments, the active layer comprises a single quantum well witha thickness between about 5 nm and about 10 nm, between about 10 nm andabout 15 nm, between about 15 nm and about 20 nm, between about 20 nmand about 25 nm, between about 25 nm and about 30 nm, between about 30nm and about 35 nm, or between about 35 nm and about 40 nm. In anotherset of embodiments, the active layer comprises a multiple quantum well.In still another embodiment, the active region comprises a doubleheterostructure, with a thickness between about 40 nm and about 500 nm.In some embodiment, the active layer comprises an In_(y)Ga_(1−y)N layer,where 0≦y≦1.

Reference is now made in detail to certain embodiments. The disclosedembodiments are not intended to be limiting of the claims and there canbe other variations, modifications, and alternatives.

FIG. 1A depicts lateral injection of current in a thin-film flip-chiparchitecture. FIG. 1B depicts a vertical injection in a thin-filmdevice. FIG. 1C depicts a vertical-injection bulk-substrate based LED.FIG. 2 depicts a flip-chip bulk-substrate based LED.

Deficiencies inherent in thin substrate flip-chip designs, anddeficiencies (e.g., light loss) that are inherent in verticalarchitectures are overcome by the herein-disclosed thick substrateflip-chip architectures. For example, the device of FIG. 1A suffers fromcurrent crowding due to the limited ability to spread current at highcurrent densities. The devices of FIG. 1B and FIG. 1C suffer from topcontact occlusion and associated light loss.

The device of FIG. 2 depicts a device of the present invention, whereinthe thick substrate flip-chip architecture supports a high power densitycapability, enabling a high light output from a very small chip withhigh efficiency and reliability.

FIG. 3 shows a sample plot of relative luminous flux as a function ofinjection current for a conventional GaN-based LED, a Cree XP-E whiteLED with junction temperature of 25° C. The plot shows that the relativeluminous flux at 350 mA (approximately 30 A/cm² to 50 A/cm²) is 100%while at 700 mA the relative luminous flux is only approximately 170%.This shows that for a conventional LED a roll-off in efficiency for theLED of approximately 15% occurs over the operating range fromapproximately 30 A/cm² to 50 A/cm² to 60 A/cm² to 100 A/cm². Inaddition, the peak efficiency for this diode occurs at an even loweroperating current density, indicating that the roll-off in efficiencyfrom the peak value is even greater than 15% were the diode to beoperated at 700 mA.

Due to the roll-off phenomenon, conventional GaN-based light emittingdiodes are typically operated at lower current densities than providedby the present method and devices, ranging from 10 A/cm² to 100 A/cm².This operating current density restriction has placed practical limitson the total flux that is possible from a single conventional lightemitting diode. Common approaches to increase the flux from an LEDpackage include increasing the active area of the LED (thereby allowingthe LED to have a higher operating current while maintaining a suitablylow current density), and packaging several LED die into an array ofLEDs, whereby the total current is divided amongst the LEDs in thepackage. While these approaches have the effect of generating more totalflux per LED package while maintaining a suitably low current density,they are inherently more costly due to the requirement of increasedtotal LED die area. One or more embodiment propose a method and devicefor lighting based on one or more small-chip high brightness LEDsoffering high efficiency operating at current densities in excess ofconventional LEDs, while maintaining a long operating lifetime.

There is a large body of work that establishes conventional knowledge ofthe limitations of operating LEDs at high current density with efficientoperation. This body of work includes the similarity in operatingcurrent density for high brightness LEDs that have been commercializedby the largest LED manufacturers, and a large body of work referencingthe “LED Droop” phenomena. Examples of commercial LEDs include Cree'sXP-E, XR-E, and MC-E packages and Lumileds K2 and Rebel packages, withone such example shown in FIG. 1A through FIG. 1C. Similar highbrightness LEDs are available from companies such as Osram, Nichia,Avago, Bridgelux, etc. that all operate in a current density range muchlower than proposed in this disclosure either through limiting the totalcurrent, increasing the die size beyond 1 mm², or packaging multiple LEDchips to effectively increase the LED junction area. Examples ofliterature referencing and showing the LED “droop” phenomena aredescribed by Shen et al. in Applied Physics Letters, 91, 141101 (2007),and Michiue et. al. in the Proceedings of the SPIE Vol. 7216, 72161Z-1(2009) by way of example. In addition, Gardner et al. in Applied PhysicsLetters, 91, 243506 (2007) explicitly state in reference to thisphenomena and attempts to overcome it that typical current densities ofinterest for LEDs are 20-400 A/cm² with their double heterostructure LEDgrown on a sapphire substrate showing a peak efficiency at approximately200 A/cm² and then rolling off above that operating point. In additionto the limits in maintaining device efficiency while operating at highcurrent density, it has been shown that as the current density isincreased in light emitting devices, the lifetime of the devices degradebelow acceptable levels with this degradation being correlated withdislocations in the material. Tomiya et. al. demonstrated in IEEE J. ofQuantum Elec., Vol. 10, No. 6 (2004) that light emitting devicesfabricated on reduced dislocation density material allowed for highercurrent operation without the decrease in lifetime that was observed fordevices fabricated on high dislocation material. In their studies,dislocation reduction was achieved by means of lateral epitaxialovergrowth on material grown heteroepitaxially. To date, conventionalmethods related to light emitting diodes related to alleviating orminimizing the droop phenomena have not addressed growth and devicedesign of light emitting diodes grown and fabricated on bulk substrates.A further explanation of conventional LED devices and their quantumefficiencies are described in more detail below.

FIG. 4A is taken from N. F. Gardner et al., “Blue-emitting InGaN—GaNdouble-heterostructure light-emitting diodes reaching maximum quantumefficiency above 200 A/cm²”, Applied Physics Letters 91, 243506 (2007),and shows two types of variations in the external quantum efficiency asa function of current density that are known in the prior art. Thebehavior shown in lines (a) and (b) of FIG. 4A are representative ofthat of conventional LEDs. With one or more relatively thin quantumwells, for example, less than about 4 nanometers thick, the externalquantum efficiency peaks at a current density of about 10 amperes persquare centimeter or less and drops relatively sharply at higher currentdensities. The external quantum efficiency at higher current densitiescan be increased by increasing the thickness of the active layer, forexample, to approximately 13 nanometers, as shown in by line (c) in FIG.4A. However, in this case the external quantum efficiency is very low atcurrent densities below about 30 amperes per square centimeter (A/cm²)and also at current densities above about 300 A/cm², with a relativelysharp maximum in between. Ideal would be an LED with an external quantumefficiency that was approximately constant from current densities ofabout 20 A/mo^(t) to current densities above about 200 A/cm², aboveabout 300 A/cm², above about 400 A/cm², above about 500 A/cm², or aboveabout 1000 A/cm².

FIG. 4B illustrates quantum efficiency plotted against current densityfor LED devices according to an embodiment of the present disclosure. Asshown, the present devices are substantially free from current droop andis within a tolerance of about 10 percent, which is significant. Furtherdetails of the present device can be found throughout the presentspecification and more particularly below. Line 403 represents thenormalized quantum efficiency (%) with current density (A/cm²)characteristic of prior art devices, and lines 402 represent thenormalized quantum efficiency (%) with current density (A/cm²) fornon-polar and polar LEDs provided by the present disclosure.

FIG. 5A is a diagram of a high current density epitaxially grown LEDstructure according to an embodiment of the present disclosure. In oneor more embodiments, the LED structure includes at least:

-   -   1. A bulk GaN substrate, including a polar, semipolar or        non-polar surface orientation and further comprising details        provided below:        -   Any orientation, e.g., polar, non-polar, semi-polar, c-plane        -   (Al,Ga,In)N based material        -   Threading dislocation (TD) density <10⁸ cm⁻²        -   Stacking fault (SF) density <10⁴ cm⁻¹        -   Doping >10¹⁷ cm⁻³    -   2. An n-Type (Al)(In)GaN epitaxial layer(s) having a thickness        ranging from about 1 nm to about 10 μm and a dopant        concentration ranging from about 1×10¹⁶ cm⁻³ to about 5×10²⁰        cm⁻³ and further comprising details provided below:        -   Thickness <2 μm, <1 μm, <0.5 μm, <0.2 μm        -   (Al,Ga,In)N based material        -   Growth T<1200° C., <1000° C.        -   Un-intentionally doped (UID) or doped    -   3. A plurality of doped and/or undoped (Al)(In)GaN active region        layers and further comprising details provided below:        -   At least one (Al,Ga,In)N based layer        -   Quantum Well (QW) structure with one or more wells        -   QWs are >20 Å, >50 Å, >80 Å in thickness        -   QW and n- and p-layer growth temperature identical, or            similar        -   Emission wavelength <575 nm, <500 nm, <450 nm, <410 nm    -   4. A p-Type (Al)(In)GaN epitaxial layer(s) having a thickness        ranging from about 10 nm to about 500 nm and a dopant        concentration ranging from about 1×10¹⁶ cm⁻³ to about 1×10²¹        cm⁻³ and further comprising details provided below:        -   At least one Mg doped layer        -   Thickness <0.3 μm, <0.1 μm        -   (Al,Ga,In)N based        -   Growth T<1,100° C., <1,000° C., <900° C.        -   At least one layer acts as an electron blocking layer        -   At least one layer acts as a contact layer.

These structures are indicated in FIG. 5A as elements 1, 2, 3, and 4,respectively.

In a specific embodiment and referring to FIG. 5A, the bulk GaNsubstrate is sliced from a gallium nitride boule, lapped, polished, andchemically mechanically polished according to methods that are known inthe art. In some embodiments, the gallium nitride boule is grownepitaxially on a seed crystal. In some embodiments, the gallium nitrideboule is grown ammonothermally. In other embodiments, the galliumnitride boule is grown by hydride vapor phase epitaxy (HVPE) of fluxmethods. Alternatively, combinations of these techniques can also exist.

In another specific embodiment, the bulk GaN substrate is prepared froma boule that was grown by a flux method. Examples of suitable fluxmethods are described in U.S. Pat. No. 7,063,741 and in U.S. ApplicationPublication No. 2006/0037529, each of which is incorporated by referencein its entirety. In yet another specific embodiment, the bulk GaNsubstrate is prepared from a boule that was grown by hydride vapor phaseepitaxy (HVPE). Further details of the next steps including growthsequences are explained throughout the present specification and moreparticularly below.

In a specific embodiment, the epitaxial growth sequence includesdeposition of at least (1) n-type epitaxial material; (2) active region;(3) electron blocking region; and (4) p-type epitaxial material.

In certain embodiments, epitaxial layers are deposited on the substrateby metalorganic chemical vapor deposition (MOCVD) at atmosphericpressure. The ratio of the flow rate of the group V precursor (ammonia)to that of the group III precursor (trimethyl gallium, trimethyl indium,trimethyl aluminum) during growth is between about 3,000 and about12,000. In certain embodiments, a contact layer of n-type(silicon-doped) GaN is deposited on the substrate, with a thickness ofless than 5 microns and a doping level of about 2×10¹⁸ cm⁻³.

In certain embodiments, an undoped InGaN/GaN multiple quantum well (MQW)is deposited as the active layer. The MQW active region has two totwenty periods, comprising alternating layers of 2 nm to 12 nm of InGaNand 1 nm to 20 nm of GaN as the barrier layers. Next, a 5 nm to 30 nmundoped AlGaN electron blocking layer is deposited on top of the activeregion. In other embodiments, the multiple quantum wells can beconfigured slightly differently. The substrate and resulting epitaxialsurface orientation may be polar, nonpolar or semipolar. In one or moreother embodiments, the bulk wafer can be in an off-axis configuration,which causes formation of one or more smooth films. In certainembodiments, the overlying epitaxial film and structures arecharacterized by a morphology that is smooth and relatively free-frompyramidal hillocks. Further details of the off-axis configuration andsurface morphology can be found throughout the present specification andmore particularly below. As an example, however, details of the off cutembodiment is described in “Method and Surface Morphology of Non-PolarGallium Nitride Containing Substrates,” James Raring et al., U.S.application Ser. No. 12/497,289 filed on Jul. 2, 2009, which isincorporated by reference in its entirety.

As an example, the present method can use the following sequence ofsteps in forming one or more of the epitaxial growth regions using anMOCVD tool operable at atmospheric pressure, or low pressure, in someembodiments.

-   -   1. Start;    -   2. Provide a crystalline substrate member comprising a backside        region and a surface region, which has been offcut or miscut or        off-axis;    -   3. Load substrate member into an MOCVD chamber;    -   4. Place substrate member on susceptor, which is provided in the        chamber, to expose the offcut or miscut or off axis surface        region of the substrate member;    -   5. Input one or more III- and/or V-containing species into the        reactor in a controlled sequence;    -   6. Cease flow of precursor gases to stop crystalline growth;    -   7. Perform other steps and repetition of the above, as desired;        and    -   8. Stop.

The above sequence of steps provides methods according to an embodimentof the present disclosure. As shown, the method uses a combination ofsteps including a way of forming a film of crystalline material usingMOCVD. In some embodiments, the present disclosure includes atmosphericpressure (e.g., 700 Torr to 800 Torr) growth for formation of highquality gallium nitride containing crystalline films that are smooth andsubstantially free from hillocks, pyramidal hillocks, and otherimperfections that lead to degradation of the electrical or opticalperformance of the device, including droop. In some embodiments, amultiflow technique is provided.

FIG. 5B is one example of a flow diagram for a method for fabricating animproved GaN film according to an embodiment of the present disclosure.The disclosure provides (step 503) a crystalline substrate member havinga backside region and a surface region. The crystalline substrate membercan include a gallium nitride wafer, or the like. In an exemplaryembodiment, the substrate is bulk nonpolar (10-10) GaN substrate.

As shown, the method includes placing or loading (step 505) thesubstrate member into an MOCVD chamber. In a specific embodiment, themethod supplies one or more carrier gases, step 507, and one or morenitrogen bearing precursor gases, step 509, which are described in moredetail below. In one or more embodiments, the crystalline substratemember is provided on a susceptor from the backside to expose thesurface region of the substrate member. The susceptor is preferablyheated using resistive elements or other suitable techniques. In aspecific embodiment, the susceptor is heated (step 511) to a growthtemperature ranging from about 700 to about 1,200 Degrees Celsius, butcan be others.

In a specific embodiment, the present method includes subjecting thesurface region of the crystalline substrate to a first flow in a firstdirection substantially parallel to the surface region. In a specificembodiment, the method forms a first boundary layer within a vicinity ofthe surface region. In a specific embodiment, the first boundary layeris believed to have a thickness ranging from about 1 millimeters toabout 1 centimeters, but can be others. Further details of the presentmethod can be found below.

Depending upon the embodiment, a flow is preferably derived from one ormore precursor gases including at least an ammonia containing species, aGroup III species (step 513), and a first carrier gas, and possiblyother entities. Ammonia is a Group V precursor according to a specificembodiment. Other Group V precursors include N₂. In a specificembodiment, the first carrier gas can include hydrogen gas, nitrogengas, argon gas, or other inert species, including combinations. In aspecific embodiment, the Group III precursors include TMGa, TEGa, TMIn,TMAl, dopants (e.g., Cp₂Mg, disilane, silane, diethelyl zinc, iron,manganese, or cobalt containing precursors), and other species. As anexample, a combination of miscut/offcut/substrate surfaceconfigurations, precursors, and carrier gases are provided below:

-   -   Polar (0001) GaN substrate surface configured −0.35 degrees and        greater (and less than −1.2 degrees) in magnitude toward m-plane        (1010);    -   Carrier Gas: Any mixture of N₂ and H₂, but preferably all H₂;    -   Group V Precursor: NH₃; Group III Precursor: TMGa and/or TEGa        and/or TMIn and/or TEIn and/or TMAl; and    -   Optional Dopant Precursor: Disilane, silane, Cp₂Mg,        oxygen-containing molecules, etc.    -   Non-polar or semi-polar GaN substrate with no offcut or miscut;    -   Carrier Gas: all N₂; Group V Precursor: NH₃; Group III        Precursor: TMGa and/or TEGa and/or TMIn and/or TEIn and/or TMAl;        and    -   Optional Dopant Precursor: Disilane, silane, Cp₂Mg,        oxygen-containing molecules, etc.

Depending upon the embodiment, the method also continues (step 515) withepitaxial crystalline material growth, which is substantially smooth andsubstantially free of hillocks or other imperfections. In a specificembodiment, the method also can cease flow of precursor gases to stopgrowth and/or perform other steps. In a specific embodiment, the methodstops at step 517. In an exemplary embodiment, the present method causesformation of a gallium nitride containing crystalline material that hasa surface region that is substantially free of hillocks and otherdefects, which lead to poorer crystal quality and can be detrimental todevice performance. In a specific embodiment, at least 90% of thesurface area of the crystalline material is free from pyramidal hillockstructures.

The above sequence of steps provides methods according to certainembodiments of the present disclosure. As shown, the method uses acombination of steps including a way of forming a film of crystallinematerial using MOCVD. In some embodiments, the present disclosureincludes a flow technique provided at atmospheric pressure for formationof high quality gallium nitride containing crystalline films, which havesurface regions substantially smooth and free from hillocks and otherdefects or imperfections. The above sequence of steps provides a methodaccording to an embodiment of the present disclosure. In a specificembodiment, the resulting crystalline material is substantially freefrom hillocks for improved device performance.

In one or more embodiments, a p-type GaN contact layer is deposited,with a thickness of about 200 nm and a hole concentration greater thanabout 5×10¹⁷ cm⁻³. An ohmic contact layer is deposited onto the p-typecontact layer as the p-type contact and may be annealed to providedesired characteristics. Ohmic contact layers include Ag-based single ormulti-layer contacts, indium-tin-oxide (ITO) based contacts, Pd-basedcontacts, Pt-based contacts, Ni-based contacts, Au based contacts, andothers. LED mesas, with a size of about 250×250 μm², are formed byphotolithography and dry etching using a chlorine-basedinductively-coupled plasma (ICP) technique. As an example, Ag/Ni/Ag ise-beam evaporated onto the exposed p-GaN layer to form the p-typecontact. Pt/Ag; Ag may be e-beam evaporated onto a portion of the p-typecontact layer to form a p-contact pad. Al; or Ti containing contacts maybe deposited by ebeam to form an n-contact. The wafer can then be dicedinto discrete LED dies using techniques such as by laser scribing andbreaking, diamond scribing and breaking, sawing, water jet cutting,laser ablation, or others. Electrical connections can be formed byconventional die-attach and wire bonding steps.

FIG. 6 is a diagram illustrating a high current density LED structurewith electrical connections according to an embodiment of the presentdisclosure. As shown, the LED structure is characterized as atop-emitting lateral conducting high current density LED according to aspecific embodiment. Preferably, the LED structure includes at least:

-   -   1. A bulk GaN substrate, including polar, semipolar or non-polar        surface orientation;    -   2. An n-Type (Al)(In)GaN epitaxial layer(s) having a thickness        ranging from about 1 nm to about 10 μm and a dopant        concentration ranging from about 1×10¹⁶ cm⁻³ to about 5×10²⁰        cm⁻³;    -   3. A plurality of doped and/or undoped (Al)(In)GaN Active Region        layers;    -   4. A p-Type (Al)(In)GaN epitaxial layer(s) having a thickness        ranging from about 10 nm to about 500 nm and a dopant        concentration ranging from about 1×10¹⁶ cm⁻³ to about 1×10²¹        cm⁻³;    -   5. A semi-transparent p-type contact made of a suitable material        such as indium tin oxide, zinc oxide and having a thickness        ranging from about 5 nm to about 500 nm; and    -   6. An n-type contact made of a suitable material such as        Ti/Al/Ni/Au or combinations of these metals, Ti/Al/Ti/Au or        combinations of these metals having a thickness ranging from        about 100 nm to about 7 μm.

The structures are identified in FIG. 6 as elements 1, 2, 3, 4, 5, and6, respectively.

FIG. 7 is a diagram of a substrate-emitting lateral conducting (i.e.,“flip-chip”) high current density LED device according to an embodimentof the present disclosure. In this embodiment, the LED device includesat least:

1. A bulk GaN substrate;

2. An n-Type (Al)(In)GaN epitaxial layer(s);

3. A plurality of doped and/or undoped (Al)(In)GaN Active Region layers;

4. A p-Type (Al)(In)GaN epitaxial layer(s);

5. A reflective p-type contact; and

6. An n-type contact.

The structures are identified in FIG. 7 as elements 1, 2, 3, 4, 5, and6, respectively.

FIG. 8 is a diagram of a substrate-emitting vertically conducting highcurrent density LED according to a specific embodiment of the presentdisclosure. The LED device includes at least:

1. A bulk GaN substrate;

2. An n-Type (Al)(In)GaN epitaxial layer(s);

3. A plurality of doped and/or undoped (Al)(In)GaN Active Region layers;

4. A p-Type (Al)(In)GaN epitaxial layer(s);

5. A reflective p-type contact; and

6. An n-type contact.

The structures are identified in FIG. 8 as elements 1, 2, 3, 4, 5, and6, respectively.

FIG. 9 is an example of a packaged white light LED containing a highcurrent density LED device according to an embodiment of the presentdisclosure. In a specific embodiment, the packaged LED device includesat least:

-   -   1. A high current density LED device;    -   2. An encapsulant or lens material that may or may not contain a        combination of red, green, blue, orange, yellow emitting, and/or        other color down-conversion materials in a configuration such        that white light is produced when the down-conversion materials        are contained in the encapsulant or lens; and    -   3. An LED package that provides electrical connection to the LED        and a path for thermal dissipation from the subject disclosure        to the surrounding environment.

The structures are identified in FIG. 9 as elements 1, 2, and 3,respectively.

Other examples of packaged LED devices can be found in U.S. ApplicationPublication No. 2011/0186887, which is incorporated by reference in itsentirety. In other embodiments, the packaged device includes an arrayconfiguration such as described in U.S. Application Publication No.2011/0186874, which is incorporated by reference in its entirety. Thepresent LED devices can be configured in an array formed on a submountmember.

The junction temperature of the LED under operating conditions isgreater than about 100 degrees Celsius, and often greater than about 150degrees Celsius, or even above about 200 degrees Celsius. In someembodiments, the LED is able to operate in continuous wave (CW) modewithout active cooling, and in some cases without passive cooling.

In other embodiments, the present disclosure provides a resulting deviceand method using bulk gallium and nitrogen containing material forimproved reliability. That is, growth on the bulk GaN substratesincreases reliability at the high current densities. In contrast,conventional LEDs grown on foreign substrates are imperfect and includemultiple defects. It is believed that such defects caused by theheteroepitaxial growth limit the device lifetime and therefore prohibitoperation at high current densities. The LEDs according to one or moreembodiments should not suffer from the same defects. In certainembodiments, the lifetime windows are >500 hours CW, >1,000 hoursCW, >2,000 hours CW, >5,000 hours CW, or others.

In a specific embodiment, the present disclosure can also include LEDbased lighting fixtures and replacement lamps. As an example, goals ofthese lighting fixtures are to produce an acceptable level of light(total lumens), of a desirable appearance (color temperature and CRI),with a high efficacy (lm/W), at a low cost. While these characteristicsare all desirable, there are typically design tradeoffs that must beconsidered that result in some, but not all, of the requirements beingmet. The present disclosure proposes LED based fixtures and lamps thatare based on light emitting diodes grown on bulk III-Nitride substratessuch as a bulk gallium nitride substrate. These LEDs exhibitsurprisingly superior performance characteristics compared withconventional LEDs that are grown heteroepitaxially on foreign substratessuch as sapphire, silicon carbide, silicon, zinc oxide, and the like.The characteristics that these bulk III-nitride based LEDs exhibitenable very different lamp/fixture designs that are currently werebelieved not to be possible with conventional LEDs.

Conventional light sources, incandescent, halogen, fluorescent, HID, andthe like have well-defined standard characteristics. Thisstandardization allows for a high degree of knowledge on the operatingcharacteristics that are required from LED based lamps when designinglight sources that are made to be replacements for the incumbenttechnology. While there is a vast array of lighting products on themarket, there are a large number of standard lamps or fixtures that havebeen the subject of intense research for LED based replacementsolutions. Some examples of these lamp/fixtures, while not exhaustive,include A-lamps, fluorescent tubes, compact CFLs, metallic reflectors ofvarious sizes (MR), parabolic reflectors of various sizes (PAR),reflector bulbs (R), single and double ended quartz halogens,candelabra's, globe bulbs, high bays, troffers, and cobra-heads. A givenlamp will have characteristic luminous outputs that are dictated by theinput power to the lamp. For example, a 20 W MR-16 fixture willtypically emit approximately 300 lm, a 30 W MR-16, 450 lm, and a 50 WMR-16 will emit 700 lm. To appropriately replace these fixtures with anLED solution, the lamp must conform to the geometrical sizing for MR16lamps, and reach minimum levels of luminous flux.

Despite these specified guidelines, there are relatively few truereplacement lamps that are designed with LEDs that reach the luminousflux desired and have either a comparable or higher luminous efficacy,motivating the end user to switch from the incumbent technology. Thoseproducts that do meet these requirements are prohibitively expensivewhich has led to extremely slow adoption. A large portion of this costis dictated by the number of LEDs required for LED based lamps to reachthe luminous flux and luminous efficacy of current technology. This hasoccurred despite the high luminous efficacy that is typically reportedfor LEDs, which is much lower in an SSL lamp than specified as adiscrete device.

FIG. 10A shows the LED power conversion, or “wall-plug”, efficiency ofLEDs based on the present invention, compared to standard LEDs, as afunction of forward current density. For the present invention, the LEDsare violet-emitting with peak wavelength of approximately 410 nm, testedat a temperature of 85° C. The efficiency remains very high out to 200A/cm² and more. In contrast, the conventional LEDs have a lower overallefficiency and much lower efficiency as current density is increased.The conventional LED data come from a data sheet for GaN-on-sapphireLEDs emitting in the blue (440-460 nm) regime.

FIG. 10B shows the LED external quantum efficiency of LEDs based on thepresent invention, compared to standard LEDs, as a function of peakemission wavelength. For the present invention, the LED efficiency ishigh in the blue emission regime, and even higher as emission wavelengthis decreased toward 400 nm. In contrast, the conventional LEDs have alower overall efficiency and much lower efficiency as emissionwavelength is reduced below about 425 nm. The conventional LED data comefrom a data sheet for GaN-on-sapphire LEDs. The reduced efficiency forthe conventional LEDs is attributable to the poorer crystal quality ofLEDs grown on foreign substrates, compared to those grown on bulk GaNsubstrates as taught in the present disclosure.

FIG. 11 shows a LED de-rating that SSL users assume when using LEDs in aSSL application. See Challenges for LEDs in Commercial Lighting, LEDs2009, San Diego, Calif., October 2009. The LEDs typically have to bede-rated from their specified performance to account for increasedtemperature during operation, optical loss, electrical conversionlosses, and lumen depreciation over time. Reduced efficacy and totalflux as a function of temperature is extremely problematic becauseheating results both from the minimal heat sink volume in typical lampfixtures, and additional heating that occurs as the end user increasesthe input current in an attempt to increase the output flux. As shown inFIG. 11, after account for a derating due to thermal effects, opticalefficiency, driver efficiency, lumen depreciation, and coefficient ofutility, a LED having a rating of 100 lumen/Watt can be derated to adelivered output of only 41 lumen/Watt.

Typical LEDs that are grown heteroepitaxially are unable to maintainhigh flux while decreasing the active area size because of current andthermal “droop”. As the current density is increased in an LED, therelative efficiency has been shown to decrease. This effect can resultin a decrease in relative radiative efficiency from 100% at about 10A/cm² to 50% at about 100 A/cm².

LED radiative efficiency has also been shown to decrease as a functionof the temperature of the junction of the LED. As the LED junction areadecreases, the thermal resistance of the LED to package bond increasesbecause the area for thermal flow is decreased. In addition to this, thecurrent density increase that is associated with the decreasing arearesults in lower radiative efficiency as described above and thus morepower that is required to be dissipated as heat. Further details ofperformance characteristics of conventional LED devices as compared tothe present techniques are provided below. As shown, the presenttechniques and device lead to higher lumens per square area.

In one embodiment, the bulk gallium and nitrogen containing substrate isn-doped, and has an electrical resistivity smaller than 0.5 Ohm-cm, andin certain embodiments, less than 0.4 Ohm-cm, less than 0.3 Ohm-cm, lessthan 0.2 Ohm-cm, less than 0.1 Ohm-cm, and in certain embodiments, lessthan 0.05 Ohm-cm. In an exemplary embodiment, the electrical resistivityis less than 0.05 Ohm-cm. Further, the aspect ratio of the LED (i.e.,the ratio of its characteristic height to its characteristic lateraldimension) is at least 0.05. This enables efficient current spreadingthrough the substrate and enables a uniform current density in theactive region, across the device. This is exemplified in thecross-sections presented herein, where it is shown that the electronsinjected from the top n-contact spread efficiently and have a uniformprofile when they reach the active region.

FIG. 12 depicts a chart 1200 showing LED MR16 lamp center beam candlepower (CBCP), in candela, for a bulk-GaN based LEDs compared to thatachievable using conventional LEDs. The dashed and solid line show theminimum and typical performance for 50-Watt halogen MR16 lamps,respectively. Using the techniques of the present disclosure, LED MR16performance 1202 surpasses that of the minimum requirement for 50-Watthalogen MR16s. In contrast, conventional LEDs with limited power densitycapability do not achieve the brightness necessary to reach the 50-Wattminimum halogen performance level.

FIG. 13 is a summary of lumen/mm² for conventional LEDs compared tocertain embodiments of the present disclosure at 350 mA drive current.

FIG. 14 is a summary of lumen/mm² for conventional LEDs compared tocertain embodiments of the present disclosure at 700 mA drive current.

FIG. 15 is a summary of lumen/mm² for conventional LEDs compared tocertain embodiments of the present disclosure at 1,000 mA drive current.

FIG. 16A is a cross-section of a thin-film LED with arrows of varyingthicknesses showing the flow of electrons and holes.

FIG. 16B is a cross-section of a thick LED with a doped substrate, witharrows showing the flow of electrons and holes, according to anembodiment.

FIGS. 17A and 17B is a top view 1700 of an LED. As shown, the top viewis substantially rectangular, however, other top view shapes arepossible (e.g., triangles, squares, multi-sided polygonal shapes,irregular polygonal shapes, etc.). For example, a top view 1750 can besubstantially in the shape of an equilateral triangle. In cases wherethe shape is not a regular polygon, a characteristic lateral dimensionof the die may be defined as the longest distance across the shape.

As shown in plot 1800 of FIG. 18, there is a tradeoff between thinningdown an LED device (which makes current crowding problematic) and makingthe device very thick (which increases resistance). For a conductingelement of resistivity r, area A and length L the resistance is R=r×L/A.Therefore, for an LED of lateral dimension x and height H, where thebulk substrate has resistivity r, two characteristic resistances can bedefined: the vertical resistance Rv=r×H/x², and the lateral resistanceRl=r×x/(x×H). Rv describes vertical resistance: a tall LED has morevertical resistance. Rl describes lateral resistance: a thin chip hasmore lateral resistance, and hence more current crowding. FIG. 18depicts this tradeoff between Rv and Rl. A possible choice to mitigatethis tradeoff is to require Rv=Rl, in which case x=H, e.g., the aspectratio of the LED should be close to unity. Rl and Rv are approximatemeasures of the actual resistance of the device, and therefore theactual optimal aspect ratio may vary slightly from unity. FIG. 18illustrates the tradeoff between lateral and vertical resistances andprovides a rationale for an optimization objective function. Further,the precise value of the aspect ratio may be chosen to take into accountother considerations besides electrical properties—such as opticaleffects.

In certain embodiments, the aspect ratio of the LED is at least 0.05 andless than 10 in order to mitigate the tradeoff between lateral andvertical resistance. In other embodiments, the aspect ratio of the LEDis larger than 0.2 and less than 2. An experimental demonstration ofsuch an embodiment is shown in FIG. 19A.

In certain embodiments, the aspect ratio of the longest lateraldimension to thickness of the light emitting diode is from 0.05 to 10,from 0.1 to 8, from 0.2 to 5, from 0.2 to 2, and in certain embodimentsfrom 0.2 to 1.

FIG. 19A shows a top-view microscope image 19A00 of a lit-uptriangle-shaped LED on a bulk GaN substrate, under injection at a highcurrent density of 500 A/cm⁻². The lateral dimension of the die is 380μm and its height is 160 μm, hence an aspect ratio of 0.4. FIG. 19Adepicts a plot line 1902 and showing that the light-up from the LED isuniform across the entire active region (see FIG. 19B).

FIG. 19B depicts a cross-section 19B00 of FIG. 19A along the dashed line1902 and further shows a plotted result 19B00 that across the LED, theintensity along dashed line 1902 over a wide range of current density isnearly uniform (e.g., as shown by plot line 1902) and shows no sign ofcurrent crowding, even at high current density (e.g., as shown). Thisresult can be contrasted to commercial LEDs with a thin GaN layer, whichshows pronounced current crowding at high current densities (see 403).Such characteristics facilitate the formation of the embodiments listedbelow.

Embodiment 1

A light emitting diode comprising a bulk gallium and nitrogen containingsubstrate having a surface region; and an active region formed overlyingthe surface region; where, the light emitting diode is configured tooperate at a current density of the active region from 175 Amps/cm² to2,000 Amps/cm²; and with an external quantum efficiency (EQE) of atleast 50%.

Embodiment 2

The light emitting diode of embodiment 1, where the current densityacross the active region is substantially uniform at a current densityfrom 175 Amps/cm² to 2,000 Amps/cm².

Embodiment 3

The light emitting diode of embodiment 1, where the emission intensityacross the active region is within ±20% at a current density from 175Amps/cm² to 2,000 Amps/cm².

Embodiment 4

The light emitting diode of embodiment 1, where the emission intensityacross the active region is within ±10% at a current density at acurrent density from 175 Amps/cm² to 2,000 Amps/cm².

Embodiment 5

The light emitting diode of embodiment 1, where the active region ischaracterized by a characteristic lateral dimension of at least 100 μm.

Embodiment 6

The light emitting diode of embodiment 2, where the light emitting diodeis characterized by a vertical dimension and a characteristic lateraldimension, where a ratio of the vertical dimension to the characteristiclateral dimension is from 0.05 to 10.

Embodiment 7

The light emitting diode of embodiment 2, where the ratio is from 0.1 to5.

Embodiment 8

The light emitting diode of embodiment 2, where the ratio is from 0.2 to2.

Embodiment 9

The light emitting diode of embodiment 1, where the light emitting diodeis characterized by an aspect ratio defined by the ration of thevertical dimension and a characteristic lateral dimension of the surfaceregion, where the aspect ratio is selected to provide a substantiallyuniform current density across the characteristic lateral dimension ofthe surface region.

Embodiment 10

The light emitting diode of embodiment 1, where the light emitting diodeis configured to emit at wavelengths from 405 nm to 30 nm.

Embodiment 11

The light emitting diode of embodiment 1, where active region ischaracterized by a thickness from 0.5 nm to 40 nm.

Embodiment 12

The light emitting diode of embodiment 1, where the active region ischaracterized by a thickness is from 40 nm to 500 nm.

Embodiment 13

The light emitting diode of embodiment 1, where the bulk gallium andnitrogen containing substrate is n-doped and is characterized by aresistivity less than 0.5 Ohm-cm.

Embodiment 14

The light emitting diode of embodiment 1, where the bulk gallium andnitrogen containing substrate is p-doped and is characterized by aresistivity less than 0.05 Ohm-cm.

Embodiment 15

The light emitting diode of embodiment 1, further comprising a junctionarea from about 0.0002 mm² to about 1 mm².

Embodiment 16

The light emitting diode of embodiment 1, where the active region ischaracterized by a junction temperature greater than about 100 degreesCelsius.

Embodiment 17

The light emitting diode of embodiment 1, where the bulk gallium andnitrogen containing substrate is characterized by a resistivity lessthan about 0.050 Ohm-cm.

Embodiment 18

The light emitting diode of embodiment 1, where the current density isfrom 400 Amps/cm² to 800 Amps/cm², at emission wavelengths from 405 nmto 430 nm.

Embodiment 19

The light emitting diode of embodiment 1, where the current density isfrom 200 Amps/cm² to 1,000 Amps/cm², at emission wavelengths from 405 nmto 430 nm.

Embodiment 20

The light emitting diode of embodiment 1, where the current density isfrom 500 Amps/cm² to 1,000 Amps/cm², at emission wavelengths from 405 nmto 430 nm.

Embodiment 21

The light emitting diode of embodiment 1, where the current density isfrom 1,000 Amps/cm² to 2,000 Amps/cm², at emission wavelengths from 405nm to 430 nm.

Embodiment 22

The light emitting diode of embodiment 1, where the light emitting diodeis characterized by a lumens per active junction area of greater than300 lm/mm², for a warm white emission with a correlated colortemperature (CCT) of less than about 5,000K, and a color rendering index(CRI) greater than 75.

Embodiment 23

A light emitting diode comprising a bulk gallium and nitrogen containingsubstrate having a surface region bounded by a polygonal area formed ofat least a longest lateral side and a shortest lateral side; and anactive region formed by epitaxial growth upon the surface region; thelight-emitting diode having a thickness where the aspect ratio of thethickness to the longest lateral side is from about 0.05 to about 10;and where the active region is configured to operate at a currentdensity of greater than about 175 Amps/cm².

Embodiment 24

The light emitting diode of embodiment 23, where a variation of currentdensity as measured across the longest lateral side is less than about20%.

Embodiment 25

The light emitting diode of embodiment 23, where the aspect ratio of thethickness to the longest lateral side is from about 0.2 to about 2.

Embodiment 26

The light emitting diode of embodiment 23, where light output from theactive region is configured to be uniform across the active regionwithin about ±20% at a current density higher than about 100 A/cm⁻².

Embodiment 27

A lighting fixture comprising the light emitting diode of embodiment 1.

Embodiment 28

A lighting fixture comprising the light emitting diode of embodiment 23.

Embodiment 29

A lamp comprising the light emitting diode of embodiment 1.

Embodiment 30

The lamp of embodiment 29, where the lamp is a replacement lamp.

Embodiment 31

The lamp of embodiment 29, where the lamp conforms to a form factorselected from an A-lamp, a fluorescent tube, a compact fluorescent lamp(CFL), a metallic reflector (MR) lamp, an MR16 lamp, a parabolicreflector (PAR) lamp, a reflector bulb (R), a single end quartz halogenlamp, a double end quartz halogen lamp, a candelabra, a globe bulb, ahigh bay lamp, a troffer lamp, and a cobra head lamp.

Embodiment 32

A lamp comprising the light emitting diode of embodiment 23.

Embodiment 33

The lamp of embodiment 32, where the lamp is a replacement lamp.

Embodiment 34

The lamp of embodiment 32, where the lamp conforms to a form factorselected from an A-lamp, a fluorescent tube, a compact fluorescent lamp(CFL), a metallic reflector (MR) lamp, an MR16 lamp, a parabolicreflector (PAR) lamp, a reflector bulb (R), a single end quartz halogenlamp, a double end quartz halogen lamp, a candelabra, a globe bulb, ahigh bay lamp, a troffer lamp, and a cobra head lamp.

FIG. 19C is a side view 19C00 of a flip-chip LED device. Currentcrowding characteristics of such a flip-chip LED device are shown anddiscussed in the following figures. Referring to the structures of theshown LED device, current has a tendency to crowd at the edge of thecontacts. This tendency is particularly observable for LED devices wherethe p-GaN resistivity is much higher than the n-GaN. Current crowdingcauses non-uniform local current densities, which in turn reduces theeffective internal quantum efficiency of the device. Current crowdingalso results in non-uniform localized heating. Non-uniform heating(e.g., hot-spots) in thin film devices is correlated to failures in thethin film devices.

Devices such as the LED device shown in FIG. 19C are formed using thick,highly conductive bulk GaN substrates. The thick, highly-conductivesubstrate layer improves current spreading, and many performance andreliability characteristics are greatly improved as compared with thinfilm devices.

FIG. 19D plots simulation results 19D00 for comparison. Specifically,the effect of the thickness of the substrate is plotted for the forwardvoltage (Vf) (see 19D02 on right side of FIG. 19D), and is also plottedfor the wall-plug efficiency (see 19D04 on left side of FIG. 19D). As wewill show through the following simulations, in order to maximize wallplug efficiency, it is desirable to have low resistivity (lower than0.05 Ohm cm) and thick (thicker than 50 μm) substrates.

FIG. 19E1 depicts current crowding in various regions of an LED die aspredicted by simulations. The shown LED die has a triangular outline anda 10 μm thick n-GaN conductive substrate, and the simulation resultspredict current crowding near the contacts of the device (see region19E102). This particular simulation was made to illustrate operatingconditions (˜160 A/cm², 85° C.). This can be compared with the devicewith a 150 μm thick n-GaN conductive substrate of FIG. 19E2, which doesnot exhibit current crowding near the contacts of the device.

FIG. 19E2 depicts near absence of current crowding in various regions ofan LED die as predicted by simulations. The shown LED die has atriangular outline and a 150 μm thick n-GaN conductive substrate, andthe simulation results predict very moderate current crowding (seeregion 19E202). This particular simulation was made to illustrateoperating conditions (˜160 A/cm², 85° C.).

The aforementioned simulation results of FIG. 19E2 are confirmedexperimentally, as shown in FIG. 19F.

FIG. 19F depicts a plot 19F00 showing performance of a device with athick conductive GaN substrate. As shown, current crowding effects arenot observed when running intensity versus distance experiments.Specifically, and as shown, a device with a thick (e.g., ˜150 μm) andhighly-conductive (e.g., ˜0.01 Ohm cm) GaN substrate exhibits almost nocurrent crowding effects, even at high current densities of 400 A/cm².In addition to the thickness of the n-GaN substrate, the low resistivityof the GaN substrate decreases current crowding and hence increasesreliability, even after long-term continuous high power operation.Several characteristics related to GaN substrate are plotted infollowing figures.

FIG. 19G1 and FIG. 19G2 show the wall plug efficiency (WPE) trend19G100, and the forward voltage (Vf) trend 19G200, respectively, as afunction of the resistivity of the n-type GaN substrate. In thisparticular case, the substrate thickness is assumed to be thick (˜150μm).

FIG. 19H1 and FIG. 19H2 shows a two-dimensional current density map19H100 and a cross section of the current density 19H200 for a n-GaNsubstrate resistivity of 1E-2 Ohm cm and when the n-GaN substrate isthick (e.g., ˜150 μm).

FIG. 19G1 and FIG. 19G2 show a two-dimensional current density map19I100 and a cross section 19I200 of the current density for a n-GaNsubstrate resistivity of 1E-1 Ohm cm and when the n-GaN substrate isthick (e.g., ˜150 μm). This case shows a lot of current crowding.

It is clear that the wall plug efficiency is higher and the forwardvoltage lower for a device with a low resistivity. Desirable of ˜0.05Ohm cm or lower are usually obtained with substrate carrierconcentration of 1e17 cm³ or higher, assuming standard reportedmobilities of ˜10-500 cm²/Vs, and substrate thickness of 50 μm orthicker.

A flip-chip LED has its metal contacts to both the anode and cathode onone side of the device. The LED is mounted on a submount by flipping itupside down and solder-attaching it to the submount. The functions ofthe submount include:

-   -   to provide an electrically conductive current path to and from        the LED, and    -   to serve as a reflector to direct light outwards and prevent        absorption in the bulk of the submount, and    -   to provide a thermally conductive path for the extraction of        heat from the system.

Light is emitted from an LED in all directions, and the efficiency of apackaged LED device, scales with the reflectivity of the submountmirror. The encapsulated, or sealed, nature of the interconnect tracesin this disclosure is important. Exposed reflective conductive tracesmade from a material such as silver are prone to metal migration, whichposes a reliability risk. Metal migration can bridge the gap betweenelectrodes of a flip-chip device, causing a short circuit. Exposedtraces are also prone to oxidation, which reduces their reflectivity.The submount structures as disclosed herein comprise:

-   -   a substrate,    -   a layer of electrically insulating material,    -   a stack of metals forming a mirror,    -   a protective dielectric layer over the mirror,    -   a second dielectric to isolate the mirror segments,    -   an upper mirror stack,    -   a protective dielectric to reflect light that falls between        segments of the main lower mirror, and    -   another layer of dielectric to encapsulate the upper mirror        segments.

The lower mirror stack is divided into segments so the current path tothe anode is electrically isolated from the path to the cathode, and toform ‘streets’ where the substrate can be easily singulated into chips.Via holes through the dielectric layers provide access to the submountmetal for the LED anode and cathode contacts. A metal seed layer for aplating process may be deposited in the via openings on the exposedmirror. A plating process would be used to fill the via openings with anappropriate metal stack, facilitating attach processes to connect LEDsand other elements, such as interposers, to the submount.

The method used to fabricate the submount can affect the reflectivity ofthe mirror and therefore govern its effectiveness. The choice of metalat the top of the mirror stack plays a large role in determining theoptical performance of the submount. The choice of reflector materialalso influences subsequent process steps, as certain metals are prone toattack by a respective set of chemicals.

FIG. 20A1 is a side view of a LED subassembly 20A100 with flip-chipstyle contacts to a high-performance light-emitting diode.

FIG. 20A2 is a side view of a LED subassembly 20A200 with a wire-bondcontact to a high-performance light-emitting diode.

As shown the LED is attached by aligning the anode and cathode LEDcontacts with the submount electrodes and using a die attach method(e.g., eutectic alloy reflow, solder-attach, gold-gold attach, etc.) tomake electrical connections.

FIG. 20B shows electrically isolated mirror segments covered by atransparent dielectric layer to protect the mirror from chemical attackand permit maximum reflectance from the mirror for a high-performancelight-emitting diode.

The method for making the submount consists of the following steps:

-   -   Formation of an insulating layer on the substrate. This layer        provides electrical isolation between the LED anode and cathode        current paths, and also between the LED and the backside of the        substrate, which is typically held at ground potential. This        layer can be thermally grown, or can be chemically grown using a        method such as chemical vapor deposition (CVD), or can be        deposited using a physical vapor deposition (PVD) process such        as sputtering. Minimum thickness of the layer is determined by        the electrical breakdown characteristics of the film, while the        maximum thickness is determined by the thermal conductivity of        the film. Plasma-enhanced chemical vapor deposition (PECVD)        could be used to deposit the insulator, but PECVD films have        lower breakdown voltages than thermally grown films, so a much        thicker film would be needed to yield an equivalent breakdown        characteristic. In cases for which the substrate is electrically        insulating itself, this insulating layer is optional.    -   Deposition of the mirror metal stack and protective dielectric        coating. The mirror stack can consist of multiple metal layers.        The bottom layer typically is used as an adhesion layer to        prevent delamination of the stack from the dielectric beneath        it. Middle layer(s) are typically barriers that prevent        diffusion of the reflective upper metal during subsequent        thermal treatment. The upper layer is chosen for its reflective        properties. The mirror stack can be deposited using either a        sputter process or an e-beam evaporation process. A protective        dielectric layer is deposited on top of the mirror stack. This        layer, which can also be sputtered or evaporated, serves to        protect the mirror from chemicals used in subsequent processing.        It also provides a protective barrier against elements and        compounds in the atmosphere that can degrade the mirror over its        lifetime, such as oxygen, water or sulfur.    -   Patterning of the mirror stack and protective dielectric layer.        The mirror and dielectric can be patterned using a lift-off        resist process. They also can be patterned by wet and/or dry        etching, which is often followed by spinning and patterning        after metal and dielectric deposition. In both cases, the upper        dielectric protects the reflective metal layer during processing        against chemicals such as resist stripper.

FIG. 20C shows a transparent dielectric layer to encapsulate the mirrorsegments and electrically isolate the mirror segments for forming asubmount used in fabricating a high-performance light-emitting diode.

A method for construction of such a mirror includes:

-   -   Blanket deposition of a second dielectric layer above the        mirror. This layer can be deposited by sputtering, or by PECVD.        It is important that the method used creates a conformal coating        that encapsulates the lower dielectric and mirror layers. This        layer provides electrical isolation between the lower mirror and        upper mirror segments, which are deposited next.    -   Deposition of the upper mirror segments and protective        dielectric coating. These segments serve as reflective elements        in the gaps between the lower mirror segments serving as paths        to the LED anode and cathode. The same deposition and patterning        methods used for the lower mirror and protective dielectric        coating apply to the upper mirror and protective dielectric. The        materials used in the upper mirror and its protective dielectric        film need not be identical to those used for the lower mirror        and its protective dielectric film.    -   Deposition of top layer dielectric coating. This layer        encapsulates the upper mirror segments. Identical concerns and        processing methods used in earlier-disclosed methods also apply        here.    -   Etching of via holes to lower mirror. These vias are holes in        the dielectrics that enable electrical contacts between the LED        terminals and the conductive paths in the submount. The vias can        be formed with dry and/or wet etch processes.

FIG. 20D shows a patterned upper mirror segment with a protectivedielectric coating to reflect light that would otherwise pass betweenlower mirror segments as used in fabrication of a high-performancelight-emitting diode.

Deposition of an optional plating seed metal in the via openings. Theseed layer may be sputtered or evaporated. A lift-off process can beused to confine the seed layer within the via openings, or alternately,the seed layer can be deposited as a blanket film. A blanket seed layeruses a subsequent mask application and patterning to define the areas tobe plated.

FIG. 20E shows another transparent dielectric layer to encapsulate theupper mirror segments and etched holes for electrical contacts to thelower mirror segments as used in a submount for a high-performancelight-emitting diode.

The via openings are filled with a metallization stack designed to becompatible with the finish on the LEDs and with other objects that maybe attached to the submount, such as interposers. For example, a finishmay be applied (e.g., by deposition of electroless nickel, and/orelectroless palladium, and/or immersion gold) according toknown-in-the-art practices for compatibility with many die attach soldermaterials such as gold-tin alloy. Alternatively, a die attach materialcan be evaporated or plated, such as for copper or gold stud bonding.

If a blanket seed layer was deposited and masked to define the platingregions, the mask and seed layer are removed from the areas that werenot plated using wet or dry etching.

As an example, the following steps may be used:

-   -   The substrate is a silicon wafer with 3 μm of thermally grown        silicon dioxide. This thickness of oxide is sufficient to        withstand a voltage of 600 VAC, the high voltage requirement for        commercial 12V LED lamps in North America and Europe.    -   The lower reflective metal stack is comprised of a 250 Å Ti        adhesion layer, a 200 Å Ni barrier layer, and 3000 Å of Ag. This        thickness of silver has a high reflectivity over the visible        portion of the spectrum and is thick enough that the resistance        of the metal is small relative to that of a LED. The protective        layer over the mirror stack is 300 Å of Al₂O₃.    -   The Ti/Ni/Ag mirror and Al₂O₃ coating are patterned using a        lift-off resist process. The wafer is coated with a bi-layer        resist stack of an underlying lift-off resist (LOR) and an upper        positive photoresist. The resist is patterned, with the LOR        layer undercut relative to the upper positive resist, the mirror        is deposited, followed by the Al₂O₃, and then a solvent is used        to remove the resist and unwanted metal/dielectric. A sputter        process is used for the Ti/Ni/Ag mirror deposition. A        non-reactive sputter process is used to deposit the Al₂O₃. The        O₂ used in a reactive Al₂O₃ deposition process can react with        the Ag mirror surface and degrade its reflectivity. Whether        sputtered or deposited using e-beam evaporation, the deposition        of the metals and Al₂O₃ must be directional to prevent a        continuous film from forming up the sidewall of the photoresist.        The film must be discontinuous to facilitate a clean lift-off        process.    -   A blanket layer of 6000 Å SiO₂ is deposited. This oxide layer        forms a conformal film over the underlying layers. PECVD or a        non-directional sputter process may be used to achieve the        necessary conformity.    -   The gaps between the mirror segments that provide electrical        isolation between the LED cathode and anode are covered with        reflectors. These upper reflective segments are formed using an        identical Ti/Ni/Ag metal stack as the lower mirror segments. The        Ag thickness in this case could be as thin as 1500 Å as this        layer does not conduct current (1500 Å is enough for        reflectivity purposes). As before, a 300 Å layer of Al₂O₃ covers        the Ti/Ni/Ag stack. The upper segments are formed using a        lift-off process identical to that used for the lower mirror.    -   Another blanket layer of 6000 Å SiO₂ is deposited to encapsulate        the upper mirror segments. Again, PECVD or a non-directional        sputter process is used to produce a conformal oxide layer.    -   The wafer is coated with photoresist that is patterned to create        openings for via holes over the lower mirror segments providing        current paths to the LED anode and cathode. If no plating seed        layer is needed, a single layer of positive photoresist is used.        If a seed layer will be deposited later after vias are etched in        the oxides, then a bi-layer stack of LOR and positive        photoresist is used. After the resist is patterned with a        standard UV exposure and develop, the SiO₂ is removed from the        via holes using a reactive ion etch (RIE) process. A suitable        etch chemistry is 45CHF₃:5O₂. The thin layer of Al₂O₃ may be        removed by etching it at room temperature in 5:1 buffered oxide        etchant (5 parts 40% NH₄F:1 part 49% HF by volume) for 20        seconds.    -   After the vias have been formed through the dielectrics, the        optional plating seed layer can be deposited using e-beam        evaporation. This layer can be 300 Å of Ni. The resist mask is        removed using a resist stripper.    -   The wafer is immersed in an electroless nickel plating bath to        produce a nickel layer about 3 microns thick. This layer extends        over the perimeter of the via opening and acts to seal the        underlying silver layer.    -   The wafer is rinsed and placed in an electroless palladium bath        to produce a palladium layer about 0.2 microns thick.    -   The wafer is rinsed and placed in an immersion gold bath to        produce a gold finish of about 0.05 microns.

FIG. 21A shows a submount subassembly 21A00 having a seed layerpatterned before depositing the metal mirror stack and exposed forplating by etching to form a submount.

The plating seed layer is deposited first and patterned. Patterning maybe done with wet or dry etching, or a lift-off process may be used. Theseed layer in this structure now has to conduct current laterally, so itneeds to be thicker than the seed layer from FIG. 20D. As an example,3000 Å of Ni can be sputtered directionally and patterned with alift-off process.

FIG. 21B shows a patterned plating seed layer used to facilitate contactformation with a plating process as used to form a submount for ahigh-performance light-emitting diode.

The bottom mirror stack and protective dielectric are deposited afterthe plating seed layer has been patterned. Patterning of the bottommirror stack and protective dielectric now includes gaps to expose theunderlying seed layer. The gaps over the seed layer are created duringthe same step as the gaps to electrically isolate the anode and cathodecurrent paths and the gaps to create singulation streets on the wafer.As before, this may be done using wet or dry etching or a lift-offprocess. The earlier example of sputtered Ti/Ni/Ag and non-reactivesputtered Al₂O₃ patterned by a lift-off process can be used here aswell.

FIG. 21C shows a patterned mirror and protective dielectric segmentscovering the seed layer to prevent light from being absorbed in the seedlayer.

FIG. 21D shows a patterned upper mirror segment with protectivedielectric coating to reflect light that would otherwise pass betweenlower mirror segments. It also illustrates a transparent dielectriclayer to encapsulate the lower mirror segments and isolate them from theupper mirror segments.

The etch process to open via holes to the seed layer only needs toremove the upper dielectric material because the lower protectivedielectric has already been opened over the seed layer. This can beadvantageous when employing a protective dielectric material that isdifficult to etch through. Following the earlier example from FIG. 20Athrough FIG. 20D, a dry etch using CHF₃ and O₂ gases can be used to etchthrough an upper layer of SiO₂.

FIG. 22A depicts a submount subassembly having a plating seed layer anda metal mirror stack deposited and patterned in contemporaneous steps.

The submount subassembly 22A00 depicts a variant of the submountstructure with the plating seed metal extending to the edge of the lowermirror segments. This approach uses one less photolithography step thanthe structure shown in FIG. 21A, as the seed metal, mirror stack andprotective dielectric are all patterned at once.

FIG. 22B1 shows patterned segments consisting of a plating seed layer, ametal mirror stack, and a transparent protective dielectric coating. Thedielectric coating facilitates formation of plated contacts, enhanceslight reflection, and prevents chemical attacks of the mirror.

The plating seed layer, lower mirror stack and protective dielectric aredeposited sequentially and patterned together. Patterning may beaccomplished with a lift-off process, or via wet or dry etching. Withthe seed layer beneath the mirror, the mirror stack can be thinned tofacilitate easier step coverage by the upper dielectric withoutcompromising conductivity. As an example, the sputtered Ag can bereduced to 1500 Å from 3000 Å. The seed layer can be 1500 Å of sputteredNi. Alternately, the seed layer can be incorporated into the mirrorstack. For example, Ni can act both as a plating seed layer and abarrier layer in a mirror stack. In this case, the thin 200 Å Ni barriercan be increased to 1500 Å for improved current conduction.

FIG. 22B2 shows patterned segments formed without a plating seed layer.The patterned segments may be defined by a lithography, deposition, andlift-off sequence. Alternately, the patterned segments may be deposited,then lithographically defined and etched to define the segments. Theapparatus comprises a metal mirror stack, and a transparent protectivedielectric coating. The dielectric coating facilitates formation ofplated contacts, enhances light reflection, and prevents chemicalattacks of the mirror.

FIG. 22C shows a patterned upper mirror segment with protectivedielectric coating to reflect light that would otherwise pass betweenlower mirror segments.

The via etch to expose the plating seed layer removes the upperdielectric, the protective dielectric over the mirror stack, and eithersome of, or the entire, mirror stack. The etch stops on the seed layer.As before, the SiO₂ can be removed with a 45CHF₃:5O₂ dry etch. The Al₂O₃can be removed with 5:1 buffered oxide etchant. The 1500 Å Ag can beetched at room temperature in a mixture of 1NH₄OH:1H₂O₂:20H₂O for 75seconds (NH₄OH is 29% NH₃ in H₂O by volume; H₂O₂ is 30% H₂O₂ in H₂O). Ifthe seed layer is 1500 Å Ni beneath the mirror stack, the 200 Å Ni inthe mirror stack can be removed in 30 seconds at room temperature by asolution of 20% HNO₃ in H₂O. The 250 Å Ti in the mirror stack can beremoved in 15 seconds at room temperature by a solution of 1HF:10H₂0 (HFis 49% HF in H₂O by volume). The HF solution does not etch theunderlying Ni seed metal, so the Ni serves as an etch stop for the viaformation. If a thick Ni barrier in the mirror stack also serves as aseed layer, the via etch is complete after the Ag is removed.

In an alternative configuration, the mirror stack can be used as theplating seed for the plated pad. For example, the Ni stack can be platedfrom Ag using a Pd activator to promote the initiation of plating. Thisapproach is simpler to fabricate and provides a thicker metal bufferunder the plated pad to manage the stress of the thicker Ni pad duringthermal cycling.

FIG. 23A shows a submount 23A00 where the metal mirror is madediscontinuous by a deposition over a self-aligned dielectric pillar.

FIG. 23A illustrates another variation of a submount. This structureemploys an undercut pillar or mesa to electrically isolate the LED anodeand cathode current paths. The advantage of this structure is the simplemethod to separate the mirror segments, which eliminates aphotolithography step. This structure lacks singulation streets on thewafer where metal is absent, but pillars (e.g., see FIG. 23A) can beused on either side of a singulation cut to confine any damage to thethin films that may arise from the singulation process. The pillarheight is small compared to the metal stacks used for die attach, so theLED electrodes can contact the lower mirror segments without issue.Alternately, the mirror segments sitting on top of the pillars can serveas the conductive paths between LED terminals, but the additionalthickness of the pillar dielectric can result in worse heat conductionfrom the LED.

FIG. 23B shows layers of the dielectric pillar prior to etching.

The dielectric pillar formation begins with a trio of blanketdepositions. The pillar layers can be deposited with e-beam, PECVD orsputtering. There must exist a selective etch process to preferentiallyremove the middle dielectric over the first and third layers.Conventional lithography can be used to pattern a resist mask thatdefines pillar locations on the wafer.

FIG. 23C shows an etched dielectric pillar with the middle layerundercut by the etching process to create a break in the subsequentmetal mirror stack.

The pillar is formed by etching the top dielectric layer, thenselectively etching the middle dielectric, stopping on the lowerdielectric layer. For example, a pillar of 1500 Å Si₃N₄/8000 Å SiO₂/1500A Si₃N₄ can be created by dry etching the top Si₃N₄ layer in a mixtureof 9CF₄:1O₂, then wet etching the SiO₂ in 5:1 buffered oxide etchant.The wet etch is isotropic and selective, naturally creating an undercutin the SiO₂ as it etches vertically. PECVD SiO₂ can be removed by 5:1buffered oxide etchant at a rate eight times or greater relative to thatof PECVD Si₃N₄. Etching 8,000 Å SiO₂ for 2 minutes and 20 seconds atroom temperature in 5:1 buffered oxide etchant creates an undercut ofapproximately 0.5 μm.

FIG. 23D shows a metal mirror stack that is deposited using adirectional process so the sidewall of the dielectric pillar is notcoated.

The mirror stack is added to the structure with a directional blanketdeposition. The metal layers can be deposited with e-beam or sputterdeposition, but the deposition tool must be configured so the metal fluxto the wafer is directional. The directional nature of the depositionensures the mirror does not form a contiguous layer up the pillarsidewall.

A protective optically transparent dielectric layer is deposited toencapsulate the mirror segments. This deposition must not bedirectional, as the dielectric must enclose the sidewalls of the mirrorsegments, protecting them against chemical attack during subsequentprocessing and long-term exposure to elements in the atmosphere such assulfur. A PECVD process or a non-directional sputter process can be usedto deposit this layer, shown as dielectric 3 in FIG. 23E.

FIG. 23E shows a transparent dielectric film encapsulating the metalmirror stack to protect it against chemical attack. Processing proceedsas outlined in the previous examples: via openings are etched in theprotective dielectric layer and an optional plating seed layer can bedeposited on the exposed mirror elements. Techniques for these stepshave been discussed in the previous examples, and they also apply to theaforementioned pillar structures.

FIG. 24 shows a submount 2400 where the seed layer and metal mirrorstack are deposited and patterned in contemporaneous steps and overwhich is deposited dielectric mirror segments.

This structure is a variant of the structure illustrated by FIG. 22A,where the function of the upper mirror segments is now performed by adielectric mirror.

FIG. 25 shows a submount 2500 where the plating seed layer is patternedbefore depositing the metal mirror stack and over which is deposited adielectric mirror for fabricating a high-performance light-emittingdiode.

This structure includes a dielectric mirror, where the function of theupper mirror segments (e.g., see FIG. 21D) is performed by thedielectric mirror.

FIG. 26 shows a submount 2600 where the seed layer and metal mirrorstack are deposited and patterned in contemporaneous steps.

The shown submount is formed by a seed layer and metal mirror stackbeing deposited and patterned in contemporaneous steps, and where atransparent dielectric layer separates segments of the mirror from anupper metal mirror which conceals gaps between lower mirror segments andover which is deposited a dielectric mirror. The materials used in theupper mirror and its protective dielectric coating may differ from thoseused in the lower mirror.

FIG. 27 shows a submount 2700 where the plating seed layer is patternedbefore depositing the metal mirror stack and over which is depositedboth a transparent dielectric layer and a dielectric mirror.

This structure is a variant of the structure illustrated by FIG. 26,where the upper mirror segments are now omitted (e.g., to simplifyfabrication).

FIG. 28 is a flow chart of a process flow 2800 for assembly of asubmount as used in fabricating a high-performance light-emitting diode.

The flow commences upon mirror deposition (see step 2820), followed bymirror segment isolation (see step 2830). A second layer of mirror(e.g., to form a dielectric mirror) can be added (see step 2840), andpassivated as needed. Via can be etched (see step 2850) and plated (seestep 2860). The assembly can receive LED die, for example, using flux(see step 2870) and the die can be soldered to form electricalconnections. As is discussed herein there may be a height differencebetween anode and cathode of an LED die, which height difference can beaccommodated by any technique, including the herein-disclosed techniquesfor establishing wetting/de-wetting regions in juxtaposition to thesolder, then melting the solder to accommodate height differences andform electrical contacts (see step 2880). A next step cleans awayresidual flux (see step 2890).

FIG. 29A depicts an epitaxially-formed LED atop a highly-reflectivesubmount to fabricate a high-performance light-emitting diode.

LED devices are singulated and placed contact-side down on submount. Asshown, the submount consists of submount substrate 2906 (brick pattern)and layers of wiring 2904 (solid horizontal lines). Elements of theassembly may be held in place temporarily with a fluid such as solderflux or electrostatics until the solder reflow is performed topermanently attach the die to the submount. In such configuration, thereis a natural gap between the top of the anode and cathode in the LEDgiven by the etch depth to reach the n-contact and the stacking of themetal layers. This gap needs to be compensated to accomplish a reliablecontact for the cathode (see such techniques as are disclosed herein).

FIG. 29B depicts an epitaxially-formed LED atop a highly-reflectivesubmount to fabricate a high-performance light-emitting diode.

As shown, the die is encapsulated. The encapsulant can be loaded withwavelength-converting materials (e.g., red-emitting phosphor,blue-emitting phosphor, green-emitting phosphor, etc.). In some casesthe encapsulant is also loaded with thermally-conductive materials,which may be index matched. Related techniques are disclosed in U.S.application Ser. No. 14/022,587, filed on Sep. 10, 2013, and U.S.application Ser. No. 14/097,481, filed on Dec. 5, 2013, each of which isincorporated by reference in its entirety.

FIG. 30 depicts an epitaxially-formed LED structure 3300 prior toforming ohmic contacts to fabricate a high-performance light-emittingdiode.

The figure depicts a GaN substrate 3008 doped n-type with an epitaxialstructure consisting of an n-type layer 3006, an active region 3004, anda surface p-type layer 3002.

FIG. 31 depicts ohmic contacts deposited atop an epitaxially-formed LEDstructure 1200 as used in fabricating a high-performance light-emittingdiode.

The p-contacts 3102 can be formed by a liftoff process, consisting offorming a pattern with photoresist, cleaning the wafer, depositing thep-contact metal, then dissolving the resist and excess metal.Alternately, the wafer may be cleaned and the metal deposited, thenpatterned and wet etched to define the contact area. The metaldeposition may begin with a thin platinum layer, followed by silver forhigh reflectivity, and a stack of other metals to prevent interdiffusionand provide environmental and mechanical protection of the silver layer.In an example, the stack on top of the silver may consist of titanium,platinum, gold, and platinum.

FIG. 32 depicts an LED structure 3200 having a dielectric film as usedin fabricating a high-performance light-emitting diode.

Dielectric coating 3202 is deposited over the whole surface of the waferand the p-contact, whether the p-contact is formed from one or twodeposition steps. The dielectric coating may consist of silicon nitride,silicon oxide, aluminum oxide, hafnium oxide, or any other insulatorwith low optical absorption. The deposition method may beplasma-enhanced chemical vapor deposition, chemical vapor deposition,sputtering, atomic layer deposition, or any other technique thatprovides good adhesion of dielectric to the underlying metal andsemiconductor and good step coverage and thickness to fully encapsulatethe ohmic contact.

FIG. 33 depicts an LED structure 3300 after etching through thedielectric film to expose GaN as used in fabricating a high-performancelight-emitting diode.

As shown, the etching through the dielectric film results in exposed GaN3302.

FIG. 34 depicts isolated LED devices 3400.

The depth of the isolation etch is sufficient to reach the n-typematerial. In an example, this etch extends through the epistructure andinto the n-type substrate.

FIG. 35 depicts n-contacts deposited on a high-performancelight-emitting diode.

Similar to the p-contact process, the n-contact 3600 is formed througheither a liftoff or a deposition-and-etch process. The first metalagainst the n-type material is chosen to form a highly reflective andlow-resistance contact to n-type GaN. For example, the contact metal maybe aluminum or silver. Subsequent metals are evaporated to protect thereflective layer during the remainder of the process and to preventinterdiffusion between the reflective metal and the solder alloys duringassembly. For example, the aluminum may be followed by 200 nm of nickeland 100 nm of platinum. Before the deposition begins, a sequence ofplasma and wet cleans is used to improve ohmic contact properties.

FIG. 36 shows a passivating dielectric film deposited over the wafer.

Dielectric coating 3602 is deposited over the whole surface of thewafer, contacts, and previous dielectric film. The dielectric coatingmay consist of silicon nitride, silicon oxide, aluminum oxide, hafniumoxide, or any other insulator with low optical absorption. Thedeposition method may be plasma-enhanced chemical vapor deposition,chemical vapor deposition, sputtering, atomic layer deposition, or anyother technique that provides good adhesion of dielectric to theunderlying metal and semiconductor and good step coverage and thicknessto fully encapsulate the ohmic contact, as well as providing passivationto the etched LED p-n junction sidewall.

FIG. 37A is a side view 37A00 shows areas of a dielectric film that areetched to create a via to expose p-contacts and n-contacts. The figuresshows an etch area 3702.

FIG. 37B is a side view showing a dewetting layer atop the n-contact ofa high-performance light-emitting diode.

The purpose of the dewetting layer is to define regions of the surfacewhere the solder will attach (wetting regions) and regions where thesolder will not attach (dewetting regions). During the die attachprocess, the solder melts and the surface tension forces act to pull thesolder off of the dewetting regions and accumulate it in the wettingregions.

FIG. 37C and FIG. 37D depict solder deposition and melting.

In the case of the solder overlapping dewetting and wetting regions asin FIG. 37C, the portions of the solder on the dewet regions will flowoff onto the wetting regions, increasing the thickness of the metal inthat area. In this way the difference in heights between differentportions of the die may be accommodated to attach to a submount withcoplanar contacts. In addition, height differences between the submountattach pads may be tolerated while still forming electrical contactsbetween the metallization on the die and submount.

The surface of the wetting region may consist of platinum, nickel,palladium, silver, gold, or any other material that has a low contactangle for molten solder. It can be deposited by evaporation, sputtering,or another process and defined by a liftoff or an etchback process. Itcan be deposited separately on a field of non-wetting material, or itcan be deposited as part of an underlying structure and exposed duringsubsequent processing. For example, the wetting layer can be platinumdeposited at the time of the n-contact.

The surface of the dewetting region may consist of silicon nitride,silicon oxide, titanium, tungsten, or other alloys or dielectrics thathave a large contact angle with molten solder. It can be deposited byevaporation, sputtering, or another process and defined by a liftoff oran etchback process.

In the case of wetting layers, the wetting material has a higher surfaceenergy than molten solder so that the solder will flow across thesurface to reduce the total surface energy. An example is a Ni/Au stack,for instance 100 nm Ni and 20 nm Au, which will act as a wetting layerfor AuSn eutectic solders. In the case of dewetting layers, theinterface between the layer and the solder has a higher surface energythan the combination of exposed dewetting layer area and the moltensolder surface, so that the solder spontaneously flows off of thedewetting layer. An example is Ti—W alloy with 90% W. Another example istitanium or chrome with surface oxide and AuSn eutectic solder.

In the case of a solder pad smaller than the wetting layer as in FIG.37D, the solder will spread to cover the wetting region and reduce inthickness. Either method can be used to compensate for heightdifferences. However, from the fabrication perspective, it may be moreconvenient to use techniques as in FIG. 37C as it uses thinner (andlarger) areas of solder to start, which in some situations is moreamenable to thin-film deposition techniques.

FIG. 38 shows solder deposits 3802 disposed on contacts of ahigh-performance light-emitting diode. A sequence of cleaning steps isperformed and then followed by solder deposition. The solder may becompositions around 78/22 Au/Sn, or 60/40 Pb/Sn, or indium, or others.The solder overlaps regions of differing wettability in order to producethe ball-up effect on melting and will therefore make up for differencesin die and/or submount height.

FIG. 39 shows results of substrate thinning 3900 to form ahigh-performance light-emitting diode. The final thickness and surfacefinish 3902 of the device can be controlled by lapping, polishing, androughening processes to maximize the light extraction from the device.The device is separated from the substrate into individual die by laseror mechanical scribing followed by mechanical break, sawing,through-wafer etching, or others, in order to form a die shape with goodlight extraction. The die shape may be square, rectangular,rhombohedral, triangular, or other. The die separation process maycontribute to improved light extraction by producing die sidewalls thatincorporate a roughness component. Roughening can be accomplished usingany know techniques, including any of the techniques disclosed oncommonly-owned U.S. application Ser. No. 13/781,633, filed on Feb. 28,2013, which is incorporated by reference in its entirety.

FIG. 40A is a flow chart of a process flow 40A00 for assembling ahigh-performance light-emitting diode.

The process flow 40A00 includes a series of steps for the assembly.Certain of the steps are highlighted for further discussion as presentedherein. Some of the steps are presented purely for ease of disclosingthe process flow. Strictly as one example of a process flow forassembling a high-performance light-emitting diode:

-   -   After epitaxial growth (step 40A20), p-contacts must be        deposited and defined (see step 40A30). These contacts may be        defined by performing lithography and a subsequent directional        deposition of a metal stack. The principal metal contacting the        p-type layer is highly reflective, such as silver, so as to        minimize optical loss due to absorption of light generated in        the die. A layer of certain elements, such as platinum,        palladium or nickel, or others, may be incorporated as a thin,        non-contiguous deposition at the interface or within the silver        film to aid in forming a low-resistance contact. Additional        conductive layers on top of the p-contact (e.g., using materials        such as any of or combinations of titanium, nickel, platinum,        and gold) may be deposited in the same deposition or subsequent        depositions to provide chemical and environmental protection of        the main reflective layer, and to facilitate subsequent        processing and solder-attach steps. In addition, a dielectric        layer may be deposited, for example by PECVD, to provide a first        protective seal of the contact. After the p-contacts have been        deposited, a lithography step is used to protect areas of the        wafer from etching. The protective resist layer covers the        p-contacts. An etching step isolates individual die by etching        through the p-type layer, the active layer, and the epitaxial        n-type layer down to the substrate (see step 40A40).    -   Following the isolation etch processing, the resist is stripped        and areas for re-contact formation are defined with another        lithography step (see step 40A50). The surface may be cleaned        with wet and plasma methods, and metal deposited, for example by        evaporation. The first metal to contact the substrate is highly        reflective, such as aluminum or silver. Subsequent layers such        as nickel and platinum are added to provide compatibility with        solder alloys. After the metal deposition, the entire surface of        the wafer is covered with dielectric such as SiO₂ or SiN (see        step 40A60). The processing of step 40A60 serves to passivate        the etched sidewalls and may further serve to provide a        dewetting surface used in step 40A80.    -   Following the passivation deposition the wafer is        lithographically patterned to define via areas for electrical        connection. One or more areas is opened through the dielectric        on the n-contact and the p-contact areas by dry or wet etching        (see step 40A70).    -   After the via opening, the dewetting/wetting areas are defined        (see step 40A80). To define dewetting areas, a film can be        deposited with has high interfacial energy with the molten        solder alloy chosen in the next step. Conversely, a wetting area        is defined by providing a material with low interfacial area to        the molten solder alloy chosen in the next step. For example, if        the solder alloy is gold-tin eutectic (abbreviated as AuSn        here), surfaces such as silicon nitride, silicon oxide, titanium        oxide, titanium with native oxide, tungsten-10% titanium alloys,        and other materials, exhibit a high interfacial energy with        molten AuSn. These materials are dewetting surfaces and can be        deposited by techniques such as sputtering, evaporation, or CVD,        and patterned by liftoff or etching. Also for AuSn solder,        materials such as nickel or titanium without surface oxides,        platinum, gold, and others, provide low interfacial energy with        molten AuSn. These materials are wetting surfaces and can be        deposited by techniques such as sputtering, evaporation, or CVD,        and patterned by liftoff or etching. Note that in some instances        a defined wetting/dewetting area may be provided without a        separate step. For example, the top layer of the n-contact might        be platinum, and the passivating dielectric SiN, and the solder        AuSn. Then the via is etched and an larger AuSn layer deposited        that overlaps the via area and some of the silicon nitride        passivation layer. In this instance, the silicon nitride acts as        the dewetting layer and the exposed platinum n-contact surface        as the wetting layer.    -   After defining the different wetting or non-wetting regions for        solder, a solder alloy is applied. The solder alloy overlaps at        least a portion of the via area. The via area is at least partly        wet by the solder alloy. A portion of the solder may also fall        outside of the via area. The portion of the solder outside of        the via area may be on a wettable or non-wettable material.        Depending on the solder alloy of choice, the deposition method        may vary. The solder alloy is selected so as to remain in a        solid state over the range of temperatures the assembly may be        subjected to during assembly and operation. For instance, the        solder alloy may be alloys with a composition around the        gold-tin eutectic with about 20 weight percent tin, which melts        in the range of 280° C. to 320° C. In this case, the alloy may        be deposited by thermal evaporation and liftoff. Alternately,        the alloy of choice may be deposited by sputtering, melt        jetting, or other techniques. Before deposition a variety of        cleaning methods such as plasma or wet cleans may be employed to        improve solder adhesion during the rest of the process. In        addition, thin adhesion layers may be deposited before the        solder layer to improve adhesion. For example, 5 nm of nickel        and 5 nm of gold may be deposited under AuSn. These adhesion        layers are soluble in the molten alloy and thin enough so as to        not significantly affect the melting temperature or kinetics, so        that the dewetting behavior is not degraded significantly (see        step 40A90).    -   Following the solder deposition, the wafer undergoes grinding,        lapping and/or polishing. The final wafer thickness is chosen to        be compatible with further wafer handling. For example, the        final wafer thickness can be determined based on design and        manufacturing metrics such as high-yield singulation (e.g.,        laser scribe singulation), and/or such as minimizing light        absorption in the substrate, and/or such as providing good        electrical, thermal, and mechanical performance, and/or such as        maximizing light extraction from the device (see step 40A95).

One problem in producing a flip-chip device with multiple electricalcontacts and attaching it to a submount is the method of accommodatingvariations in the height of the contacts on the device and/or thesubmount. This is illustrated in FIG. 29A. In this case the gap 2902 iscaused by the fact that the n-metal and solder thickness does not matchthe thickness of the etch and the metals on the p-contact. Even ifthicknesses were matched, tolerances of the thicknesses and etch depthwould result in gaps varying from device to device. This heightdifference between the n-contact and the p-contact is accommodated usingthe combination of solder and dewetting/wetting regions as deposited insteps 40A80 and 40A90. When the solder melts, its geometry can adjust tominimize the total Gibbs free energy. This is accomplished by thesurface tension of the liquid alloy causing the shape of the liquidalloy to change to reduce the total area of high surface/interfaceenergy and increasing the area of low surface energy while maintainingthe total volume (mass). For example, take a 100 micron diameter disc of80% gold-20% tin (AuSn) solder that is 2 microns thick, sitting onsilicon nitride. The silicon nitride has a 50 micron diameter holeexposing a platinum surface. When the AuSn melts, the total energy isreduced if the diameter of the disc decreases to reduce the area of highinterfacial energy AuSn-silicon nitride interface. In order to achievethis, the total surface area of liquid AuSn increases slightly, whichcosts interfacial energy. The diameter continues to shrink until thetotal energy is minimized. In practice, for this combination ofmaterials and dimensions, the interfacial energies are such that theAuSn disk will shrink to the diameter of the platinum surface and beapproximately 8 microns tall. Therefore, a height difference of up 6microns between contacts can be accommodated and electrical contactformed. If there is excess AuSn, when it reaches the opposing electricalcontact it will begin to spread, for example across an electrolessnickel/immersion gold surface.

The situation of a small solder region on a larger wettable region willresult in the solder spreading to cover the wettable region until thetotal surface energy is minimized. This will reduce the height of thesolder region and can also provide some accommodation of the heightdifference between electrical contacts. However the relative heightchange is limited to the original solder height with thiswetting/spreading approach.

The final shape of the solder after melting is determined by acombination of the starting solder shape, the wetting area shape, thedewetting area shape, and the relevant surface and interfacial energies.The starting shape includes all contiguous volumes of solder. Forexample, the solder may flow up or down a step to form the final shapeas long as there is no physical break in the solder layer. This abilityto control the final solder shape independently of the starting shapeadds process and design flexibility. For example, solder may dewet froma particular area (e.g., as per a particular design), increasing the gapbetween electrical conductors and providing larger breakdown voltageafter assembly. This can also control which areas of the electricalcontact are made first and help to reduce trapped voids at solderinterfaces.

The combination of dewetting and wetting surfaces with solder placementprovides electrical connections between die contacts and submountcontacts. In some cases, the contacts on the die and submount are eachnot precisely coplanar. This non-coplanarity can be due to processdesign and variability (e.g., choice of mesa etch depths and metalthickness on the die, and non-uniformity in submount contactdeposition). The wetting and dewetting areas with solder deposited canbe arranged on the submount, or the wetting and dewetting areas withsolder deposited can be arranged on the die. In some situations, it maybe advantageous to perform all or portions of step 40A80 and step 40A90on the submount rather than performing those steps on the die. Forinstance, in some cases, more space is available for depositing solderand achieving larger solder volumes and larger, lower resistanceelectrical contacts if the solder dewetting scheme is applied to thesubstrate. In other instances, (e.g., depending on the solder depositiontechniques used) it may be more felicitous to perform the deposition onthe die because the fraction of die covered with solder is muchhigher—leading to reduced waste of the deposited solder material. Incertain cases where the gap between electrical contacts to be connectedis very large, it may be felicitous to use a combination of solderdeposited on both the die and solder deposited on submount.

FIG. 40B is a flow chart of a process flow 40B00 for assembling ahigh-performance light-emitting diode. This flow is further described aspertaining to the embodiments below.

Embodiment 1

A method of forming a light emitting diode having anelectrically-conductive n-doped bulk GaN-containing substrate with an nlayer and a p layer to be disposed on a submount (step 40B20), themethod comprising: performing p-contact formation to provide electricalcontact to at least a portion of the p-layer of the light emitting diode(step 40B30); etching through the p-layer and the n-layer down to thesubstrate (step 40B40); performing re-contact formation to provideelectrical contact to a least a portion of the n-type substrate (step40B50); performing dielectric passivation; depositing dewettingcompounds on a first set of regions of the n-contact (step 40B60);depositing wetting compounds on a second set of regions of the n-contact(step 40B70); depositing solder over at least some of the first set ofregions and the second set of regions (step 40B80); disposing the lightemitting diode over the submount (step 40B90); and reflowing the solder(step 40B95).

Embodiment 2

The method of claim 1 wherein the etching is performed usingphotolithography and an etchant.

Embodiment 3

The method of embodiment 1, wherein the n-contact formation comprisesdepositing multiple layers of metals.

Embodiment 4

The method of embodiment 3, wherein the multiple layers of metalsincludes at least one layer of at least one element selected from thelist consisting of silver, gold, platinum, palladium, titanium, tungstenand nickel.

Embodiment 5

The method of embodiment 1, wherein the dielectric passivation includesat least some deposition of at least one material selected from the listconsisting of a SiO₂-containing material, a SiN-containing material, ahafnium oxide-containing material, an aluminum oxide-containingmaterial, a niobium oxide-containing material, a tantalumoxide-containing material, a titanium oxide-containing material, amagnesium oxide-containing material, and a zirconium oxide-containingmaterial.

Embodiment 6

The method of embodiment 1, wherein the dewetting compounds includes atleast some deposition of at least one material selected from the listconsisting of, a silicon-nitride-containing material,silicon-oxide-containing material, a titanium-oxide-containing material,a tungsten-containing material.

Embodiment 7

The method of embodiment 6, wherein the dewetting compounds aredeposited using at least one of, sputtering, evaporation, CVD.

Embodiment 8

The method of embodiment 7, wherein the dewetting compounds arepatterned by a liftoff process or by an etching process.

Embodiment 9

The method of embodiment 1, wherein the wetting compounds include atleast some deposition of at least one material selected from the listconsisting of nickel, gold, platinum, silver, copper, palladium, andcobalt.

Embodiment 10

The method of embodiment 1, wherein the solder includes at least onesolder material selected from the list consisting of gold, tin, agold-tin eutectic.

Embodiment 11

The method of embodiment 10, wherein the solder is a gold-tin eutecticof about 20% weight tin.

Embodiment 12

The method of embodiment 10, further comprising a plasma cleaning step.

Embodiment 13

The method of embodiment 1, further comprising depositing a layer of anadhesion material before depositing the solder.

Embodiment 14

The method of embodiment 13, wherein the adhesion material is soluble inthe solder material when the solder material is in a molten state.

FIG. 41 depicts a solder reflow process 4100 used for assembling ahigh-performance light-emitting diode.

The solder reflow process begins by physically placing the die onto thesubmount with wiring to provide electrical connections of one or moredie. This submount may incorporate mirrors, dielectrics, and otherstructures to minimize light absorption. They may be held in placetemporarily using flux, cold welding, electrostatics, or other methods.The die are heated to melt the solder. The combination of solder shapeand thickness of the dewet/wetting layer shapes, and etch and metalthicknesses combine together to accommodate die surface heightvariations and submount surface height variations.

FIG. 42 depicts a die design with an edge corner n-contact 4202 forforming a high-performance light-emitting diode. The figure also shows ap-contact 4204. The shown n-contact consumes 4,311 μm², and thetriangular die consumes 69,280 μm², for an n-contact area of 6.2%. Theembodiment of FIG. 42 is merely one example, and others are reasonableand contemplated. For example, a die design with an edge cornern-contact 4202 for forming a high-performance light-emitting diode canbe fabricated such that the n-contact is relatively larger (e.g., of8,376 μm²), resulting in a 12.1% coverage of the die surface area.Furthermore, in some cases the die can be fabricated to be relativelylarger (or relatively smaller), thus the n-contact coverage of the diesurface area can range from about 2% to about 20%.

In the embodiment discussed above, as well as in other embodiments (seethe following figures), contact resistivity is <1 ohm for a 4,311 μm²contact, resulting in a value of <43 micro-ohm-cm². In addition to thegeometry and other depicted features, there are a range of conditionsthat result in <1 ohm resistance/contact. Strictly as one numericexample, each additional ohm added at 100 mA drive gives 100 mV excessvoltage, or an efficiency loss of ˜3%.

FIG. 43 depicts a die design with an edge corner n-contact and a centralbus bar for forming a high-performance light-emitting diode.

FIG. 44 depicts a die design with an edge corner n-contact and a bus baralong one edge for forming a high-performance light-emitting diode.

FIG. 45 depicts a die design with an edge corner n-contact and two busbars along two edges for forming a high-performance light-emittingdiode.

FIG. 46 depicts a die design with a single edge corner n-contact and abus bar ring for forming a high-performance light-emitting diode.

FIG. 47 depicts a die design with a double corner n-contact for forminga high-performance light-emitting diode.

FIG. 48 depicts a rhombus die design with a single corner n-contact forforming a high-performance light-emitting diode.

FIG. 49 depicts a rectilinear die design with respective variations ofn-contact and p-contact patterns for forming a high-performancelight-emitting diode.

As can be seen in FIG. 49 and previous figures, die layout may use awide variety of n- and p-contact patterns. The area can split between nand p contacts many ways (with different shapes of pads and includingring, bus-bar, and/or interdigitated contacts) with the goal of limitingdie series resistance while maximizing the area of the p-contact.

FIG. 50 depicts a subassembly 5000 comprising a highly thermallyconductive, electrically isolated mirror submount with buried routingtraces for use as a submount for a high-performance light-emittingdiode.

One possible method for making a mirror submount results in a submounthaving the following characteristics:

-   -   Highly thermally conductive by construction. Techniques to        construct mirrors are disclosed in U.S. application Ser. No.        14/097,481 filed on Dec. 5, 2013, which is incorporated by        reference in its entirety.    -   Ability for the mirror surface to be anchored to the thermally        conductive substrate by via/patterned region structures to        dissipate heat from the mirror into the conductive substrate.    -   Buried routing traces for diode strings to minimize optical        efficiency losses.    -   Separation of buried trace and contact proceeds from mirror        formation process, so the submount is ready for mirror        patterning at an alternate vendor if needed.

FIG. 51 depicts a series of steps of a fabrication process 5100 forforming a thermally conductive and highly reflective submount havingburied routing traces for use in assembling a high-performancelight-emitting diode.

Accordingly, as in FIG. 51 step 1, a barrier layer with dielectricproperties that offers high voltage breakdown protection is developed onthe high thermal conductivity carrier. Then, as shown in FIG. 51 step 2,a seed layer (e.g., Ti/Cu) is sputtered onto the barrier, followingwhich a suitable photoresist is spun on (FIG. 51 step 3) and patternedusing standard lithography techniques (FIG. 51 step 4).

FIG. 52 depicts a series of steps of a fabrication process 5200 forforming a thermally conductive and highly reflective submount havingburied routing traces for use in assembling a high-performancelight-emitting diode.

Accordingly, as shown in FIG. 52 step 5, copper is electroplated intothe photoresist pattern openings, following which the photoresist isstripped (FIG. 52 step 6) and the seed layer is etched (FIG. 52 step 7)to create exemplary routing/trace elements that connect the diodestogether to form circuits in the final form.

FIG. 53 depicts a series of steps of a fabrication process 5300 forforming a thermally conductive and highly reflective submount havingburied routing traces for use in assembling a high-performancelight-emitting diode.

Accordingly, as shown in FIG. 53 step 8, a photodefinable polyimide isthen patterned on the construction a second time, and subsequentlypatterned to expose the copper terminals plated earlier (see FIG. 53step 9 a and FIG. 53 step 9 b). The polyimide serves as a stress bufferand insulating layer. Then a seed layer (e.g., Ti/Cu) is then sputteredon the polyimide (FIG. 53 step 10). In an alternate embodiment, aprovision for heat sinking the mirror layer (to be deposited later) isaccomplished by patterning copper ‘pillars’ such as 5320 and 5330 aspart of the same constructional steps covered in FIG. 51 through FIG.53. The ‘pillars’ exemplar 5320 and 5330 are not part of the routingcircuits that terminal 5210 and terminal 5220 are tied to, and serve adifferent purpose i.e., heat conduction from the final phosphorconfiguration to the mirror and down to the high thermal conductivitysubstrate carrier in FIG. 52 step 1.

FIG. 54 depicts a series of steps of a fabrication process 5400 forforming a thermally conductive and highly reflective submount havingburied routing traces for use in assembling a high-performancelight-emitting diode.

Accordingly, as shown in FIG. 54 step 11, a suitable photoresist ispatterned to expose the seed layer on the copper terminals, and theassembly is then placed in an electroplating bath to plate copper in theexposed area of FIG. 54 step 12.

FIG. 55 depicts a series of steps of a fabrication process 5500 forforming a thermally conductive and highly reflective submount havingburied routing traces for use in assembling a high-performancelight-emitting diode.

Accordingly, the photoresist in the prior step is now stripped (FIG. 55step 13), and the seed layer is etched to create the final diodeanode/cathode terminals 5510 and 5520 (FIG. 55 step 14). Optional stepsmay be done to deepen the trench where the reflective mirror will becreated using standard lithographic techniques and selective etching ofthe polyimide layer (see FIG. 56).

FIG. 56 depicts a series of steps of a fabrication process 5600 forforming a thermally conductive and highly reflective submount havingburied routing traces for use in assembling a high-performancelight-emitting diode.

Steps that may be done to deepen the trench where the reflective mirrorwill be created using standard lithographic techniques and selectiveetching of the polyimide layer, see step 15. Following this, thereflective mirror is then created adjacent to the two die terminals,step 16. With the optional heat-sinking ‘pillars’ constructed, the finalstructure is as shown in FIG. 56 step 17. The heat-sinking pillars areshown as single entities for illustration, and may be created withvarious geometric configurations, array patterns, etc.

FIG. 57 is a flow chart of a process flow 5700 for forming a thermallyconductive and highly reflective submount having buried routing tracesfor use in assembling a high-performance light-emitting diode.

As shown, the process flow includes:

-   -   Formation of circuit traces and heat-sinking pillars (see step        5720);    -   Polyimide planarization (see step 5730);    -   Via formation down to traces (see step 5740);    -   Plating of plug (see step 5750); and    -   Mirror formation (see step 5760).

Improving the reflectivity of the submount is desirable to increase thesystem efficiency. This is especially measurable when thecolor-converting medium is scattering (e.g., such that photons bounce inthe package several times before escaping). A simulation shows that formany embodiments of the disclosed packages, photons may bounce onaverage three or more times on the submount before escaping.

In the case of a dielectric mirror, a simple way to obtain highreflectivity is to make a distributed Bragg reflector (DBR) havingreflectivity at a design wavelength. The wavelength range ofhigh-reflectivity is then determined by the number of pairs and by theindex contrast between the low-index and high-index materials of themirror. A common low-index material is SiO₂. In some cases, thelow-index material can be made porous (for instance by choosing specificdeposition parameter) to further lower its index. Examples of high-indexmaterials are Ta₂O₅, Nb₂O₅ and Ti₂O₅. The total thickness of the stackis often constrained by practical considerations such as ease offabrication (i.e., deposition time and cost, difficulty to etch thelayers), thermal resistance, etc.

As an example, consider a dielectric mirror stack made of two materials(n_low=1.5 and n_high=2.2). The mirror is a 6-pair DBR on silicon, witha design wavelength of 600 nm.

FIG. 58 plots reflectivity versus wavelength. FIG. 58 shows thenormal-incidence reflectivity for this mirror coming from air.Reflectivity is high beginning at about 550 nm (see rise 5802) andthrough the range 550 nm to 680 nm. In order to increase the wavelengthrange of high reflectivity, one can stack multiple DBRs with differentdesign wavelengths. As an example, consider a dielectric mirror stackmade of two materials (n_low=1.5 and n_high=2.2). The mirror is a madeof three 6-pair DBRs on silicon, with design wavelengths of 450 nm, 550and 700 nm. These design wavelengths are chosen as examples only and aredeemed to be “blue”, “green” and “red” DBRs.

FIG. 59 plots normal incidence reflectivity versus wavelength. FIG. 59shows the normal-incidence reflectivity for this mirror coming from air.Here reflectivity is above 90% at nearly all wavelengths (e.g., see plot5902). Such structures, with high reflectivity at normal incidence in alarge wavelength range, are well-known in the art. However, the submountreflectivity should preferably be high not only at normal incidence butalso at all incoming angles and polarizations, since the photons may berandomized by scattering. Besides, high-reflectivity at all anglesmeasured from air is not a sufficient condition. In a white LED, thecolor-converting materials are usually embedded in an encapsulant suchas a silicone, which may have a refractive index of 1.4-1.5. The lightis incident on the submount from this medium so that the submount isprobed at a variety of angles beyond the angles accessible from air.Hence, what is needed is a high reflectivity at all angles for lightcoming from the encapsulant medium.

FIG. 60 plots angle-dependent reflectivity versus angle. For metallicmirrors, this distinction may not be crucial since the reflectivity of ametal usually varies moderately with angles. FIG. 60 shows theangle-dependent reflectivity of a silver mirror at a wavelength of 550nm (coming from an index n=1.5, and averaged over polarization). Thereflectivity is above 97% at all angles (see plot 6002). For adielectric stack on the other hand, reflectivity can be stronglyangle-dependent. For instance, for a DBR the Bragg condition isangle-dependent. Notably, the reflectivity of a dielectric stack tendsto vanish for transverse-magnetic (TM-polarized) light near the Brewsterangle of the dichroic mirror. If TM-polarized light impinges on thedielectric stack at such an angle, it is transmitted and can incur loss.For instance, observe various aspects of the stack as depicted in FIG.59.

FIG. 61 plots TM reflectivity of the stack as a function of angle andwavelength, for light incoming from air. Here as in FIG. 59 thereflectivity is rather high overall, despite dropping to low values atsome angles and wavelengths.

FIG. 62 plots TM reflectivity of the same stack as a function of angleand wavelength for light incoming from silicone (n=1.5). Here on theother hand, the reflectivity is very low for all wavelengths, for anglesaround 60 degrees. This corresponds to the Brewster angle of thedielectric stack; in this angular range the stack is nearly transparentand light is mostly absorbed by the silicon substrate.

This effect is not well-known in the art. Indeed, in most applicationsdichroic mirrors are used near normal incidence, and for light incomingfrom air. The present situation—namely, probing all angles from ahigh-index medium—is peculiar to the context of the embodimentsdisclosed herein. Therefore, due to the angular dependence of thereflectivity, care must be taken to design the reflectivity.

In order to evaluate the effective reflectivity, consider the angle- andwavelength-averaged one-bounce effective reflectivity:R _(eff)=

∫₀ ^(π/2) R(λ,θ)·cos(θ)·2 sin(θ)·dθ

_(400-700nm)

In this formula, the reflectivity is averaged over incoming angles andover wavelengths in the visible range. The angular factor cos(θ)accounts for the Lambertian distribution of light, and the angularfactor 2 sin(θ) accounts for the solid angle term. The angles areunderstood as angles of propagation in the encapsulant medium.

The formula is a good predictor of the optical properties of a mirror.Other angular dependencies could be assumed, but they would typicallygive the same relative trends for comparing different mirrors. Besides,various improvements to the formula can be considered, for instance,taking into account the spectrum of light impinging on the submountrather than performing a uniform spectral average. These improvementscan be useful to make the formula even more accurate.

Further, in cases where the substrate reflectivity varies in-plane,R_(eff) can be averaged over the area of the substrate. Consider theeffective loss:L=1−R _(eff)

This formula quantifies mirror loss: a low value of L is desirable.Besides, loss is usually sampled several times in a scattering system(for instance, about three times) so that even a small difference inloss can have a big impact on final performance. For instance, a 1%difference in the value of L may have a significant impact on the lightoutput of an LED system, such as a 3% impact or a 5% impact. Applicationof the formula to the structure that is characterized in FIG. 43 yieldsL=27%, which is a very poor value.

As a solution to the problem described above, embodiments of thedisclosure combine the dielectric mirror with a metallic mirror. Incertain embodiments, a metallic mirror is deposited on the substrate(such as silicon) and a dielectric stack is deposited on the metal. Intypical embodiments, the metal is preferably silver or aluminum.

In this case, reflectivity is ensured by the dielectric stack in a widerange of angles and wavelengths. In ranges where the dielectric stack isless reflective (or even nearly transparent), the metallic mirrorensures reflectivity.

FIG. 63 plots reflectivity as a function of angle and wavelength. Someembodiments use the stack as shown and described as pertaining to FIG.59 but deposited on an aluminum layer. Around the Brewster angle of thedielectric stack, reflectivity is about 80-90% due to the presence ofthe aluminum mirror. Application of the loss formula to this structureyields L=7%, which is a good value.

FIG. 64 plots reflectivity as a function of angle and wavelength. Someembodiments use the stack as shown and described as pertaining to FIG.59 but deposited on a silver layer. Around the Brewster angle of thedielectric stack, reflectivity is about 95% due to the presence of thesilver mirror. Application of the loss formula to this structure yieldsL=1.5%, which is an excellent value. For comparison, using a bare silvermirror only (without the dichroic stack) yields L=2.1%. Therefore thepresence of the dielectric stack reduces the one-bounce loss by about30%. This result pertains to a non-optimal dielectric stack.

In embodiments of the structures disclosed herein, further reflectivityimprovements can be achieved by optimizing the optical structure. Thisincludes choice of the dielectric materials, fine-tuning the layerthicknesses, the addition of thin layers to produce additional opticalinterference, a proper choice of the design wavelengths for DBR layers,and use of more complex stacks (for instance rugate mirrors orgraded-index layers instead of simple DBRs).

FIG. 65 illustrates the performance of various silver-dielectric stackdesigns. For this figure, many dielectric stacks were simulated andevaluated with the effective loss formula for light coming from anencapsulant of index 1.5. The stacks are made of three DBRs (blue,green, red) on a silver mirror 6502, with varying design wavelengths andnumbers of pairs and, therefore, varying thicknesses. Shown in FIG. 65is the envelope of the solutions. The lower boundary of this envelopeindicates the tradeoff between loss and thickness; mirrors with morepairs can have lower loss, but are thicker. This boundary is indicativeof the best performance that may be achieved for a given thickness, atleast within the particular set of designs considered in thissimulation. Also shown in FIG. 65 is the effective loss of a simplesilver mirror. Some silver-dielectric mirrors (e.g., silver dielectricmirror 6504) with a thickness of about 3 microns have a loss of about1.1%, which is about half the loss of the silver mirror. Thisillustrates that design of the dielectric stack is important for bestperformance. As previously mentioned, this difference in loss may bemagnified if light bounces several times in the LED before escaping.

FIG. 65 illustrates the performance of certain possible design of thedielectric stack. Further designs are possible. Therefore, theperformance shown in FIG. 65 is illustrative, and is not intended as anindication of the best possible performance with a silver-dielectricmirror.

In embodiments where a silver mirror is employed, care must be taken tomaintain the reflectivity of the silver. For instance, depositing roughsilver rather than smooth silver may increase the effective loss fromabout 2% to about 3% or to about 4%.

High silver reflectivity may be achieved by selecting a properdeposition, including deposition technique (sputtering, e-beam, etc.);deposition parameters (temperature, rate, ambient gas or pressure,etc.); underlying metal stack, encapsulant material, etc. In someembodiments, the surface roughness of the silver mirror is minimized toimprove its reflectivity. In some embodiments, the silver is depositedand encapsulated with a first protective layer of dielectric to ensurethat the quality of the silver is preserved. The selection of theencapsulant material depends on the optical properties and interactionwith the Ag layer during processing and operation. For example, somematerials have good enough adhesion to Ag and do not degradereflectivity during subsequent thermal cycles by reacting at theinterface. Examples of good encapsulant materials are Al₂O₃, AlN, andSiN. The grain size and arrangement of the grain in the Ag layer canhave a great impact on the reflectivity of bare Ag, and even greaterimpact after encapsulated with a protective dielectric since theroughness can enhance the coupling of plasmons at the interface of Agand the first dielectric layer.

The grain structure can be controlled by designing the deposition of thelayer below the Ag (starting surface) and by selecting the depositionparameters of the Ag layer itself. Additionally, the Ag stack can beannealed to consolidate the grains and create a smoother top interfaceprior to the deposition of the protective dielectric layer. Theannealing may for instance be performed at 300° C. to 400° C. in a highpurity nitrogen environment, making sure to avoid the presence of oxygenor other impurities during the high temperature steps. In an exemplaryembodiment, the process includes depositing the Ag stack, annealing it,and encapsulating it in the first protective layer without breaking thevacuum.

In some embodiments, the strain of the layers composing the submount istuned to avoid overall excessive strain. This can be achieved bychoosing the deposition parameters for the various layers of thesubmount.

In some embodiments, one of the dielectric materials may have someabsorption at short wavelength. This may, for instance, be the case forNbO_(x) layers or TiO_(x) layers, which sometimes absorb some blue andviolet light. In this case, it is preferable that short-wavelength lightbe reflected first by the stack so that it does not penetrate the stacksignificantly, thus avoiding excess optical loss. For instance, inembodiments comprising three DBRs (blue, green and red), the blue DBRcan be placed at the top of the dielectric stack. Further, thedeposition of the dielectric materials may be designed to reduce opticalabsorption.

In some embodiments, a low-index layer is further added to the mirror.This low-index layer has a substantially lower index than the index ofthe encapsulant. For instance, the encapsulant may have an index of 1.4or 1.5 and the low-index layer may have an index of 1.35 or 1.3. Thelow-index layer is beneficial to the reflectivity because lightimpinging on the submount at large angles undergoes total internalreflection and is therefore perfectly reflected. For total internalreflection to be effective, the low-index layer should be thick enough,namely on the order of one or several wavelengths. In some embodiments,the low-index layer is 500 nm thick or 1000 nm thick.

The low-index layer may contain porous SiO₂, MgF₂, or other low-indexdielectrics or porous dielectrics known in the industry. Depositiontechniques can be by sputtering, e-beam, or coating and baking aqueoussolutions by dip coating, spin coating, or spray coating. In someembodiments, deposition is performed with the substrate at an angle toachieve a desired porosity.

In an exemplary embodiment, the mirror includes a substrate (such assilicon or silicon coated with various metal layers), a silver mirror, adielectric seal, a dielectric stack which includes three DBR mirrors(blue, green and red) comprising SiO₂ and Nb₂O₅, and a low-index layer(n=1.3) with a thickness of 500 nm.

FIG. 66 plots some light trajectories. A first ray 6602, incoming at alow angle, is reflected by one of the DBR mirrors (according to thewavelength of the ray). A second ray 6604, incoming in TM polarizationnear the Brewster angle of the DBR mirrors, goes through the dielectricstack and is reflected by the silver mirror. A third ray 6606, incomingat large angle, is reflected by the low-index layer.

FIG. 67 illustrates the performance of different dielectric stacks. FIG.67 is similar to FIG. 66 in that it shows the performance of a varietyof dielectric stacks (e.g., silver/dielectric/low-index mirror 6702, andsilver dielectric mirror 6504). In this depiction, performancecharacteristics of the same designs as in FIG. 66 are plotted. Further,similar designs including a low-index layer (of index 1.3 and thickness500 nm) are also considered. The latter designs enable lower effectiveloss for a given total thickness.

The index and thickness of the low-index layer may be further designedtogether with the rest of the optical design of the submount stack, tofurther improve reflectivity. In various embodiments, an electricaldistribution circuit is integrated to the submount mirror so that theLEDs can be bonded and contacted.

In some embodiments, the traces are metal traces deposited on top of themirror layers. In other embodiments, the traces are covered indielectric layers and are a part of the mirror stack. In some cases, thetraces are made of silver coated with a dielectric layer. In othercases, they are silver coated with multiple dielectric layers, which actas reflectors.

FIG. 68 depicts a submount configuration. In this figure, the submount6806, a die 6804, and conductive lower mirror regions (e.g., conductivelower mirror region 6808 ₁ and conductive lower mirror region 6808 ₂)are indicated. The conductive lower mirror regions are separated (e.g.,see separation streets as shown) so as to provide electrical isolationbetween conductive mirror regions. In some embodiments, streets arenecessary to insulate various parts of the submount. This is forinstance the case for a flip-chip architecture, where conductive islandsof metal on the submount must be isolated from each other. In general,it is desirable to ensure that these separation streets have a highreflectivity. This can be implemented as described above. In some cases,the streets may be covered by metal mirrors, dielectric mirrors, or acombination of metallic and dielectric mirrors. Because the surface areaof the streets are typically a small fraction of the total submountarea, it may be acceptable that the reflectivity of the streets be lowerthan that of the rest of the submount.

The submounts and LED die and other structures as disclosed herein canbe incorporated into a light source, and such light sources can be usedin LED-based lighting systems.

Some of the aforementioned lighting systems and some of theaforementioned illumination products include a light source, a powersupply, a heatsink or other structures for thermal management, and someinclude optics (e.g., lenses, filters, etc.) to modify the light emittedfrom the light source. The following figures show and describe selectedlighting systems embodied as lamps, luminaires, display, etc.

FIG. 69A through FIG. 69I depict embodiments of the present disclosurein the form of lamp applications. In these lamp applications, one ormore light emitting diodes are used in lamps and fixtures. Such lampsand fixtures include replacement and/or retro-fit directional lightingfixtures.

In some embodiments, aspects of the present disclosure can be used invarious lighting system assemblies. As shown in FIG. 69A, the assemblycomprises a base member (e.g., screw cap 6928), a driver housing 6926, adriver board 6924, a heatsink 6922, a metal-core printed circuit board6920, an LED light source 6918, a dust shield 6916, a lens 6914, areflector disc 6912, a magnet 6910, a magnet cap 6908, a trim ring 6906,a first accessory 6904, and a second accessory 6902.

The components of the assembly 69A00 can be fitted together to form alamp. FIG. 69B depicts a perspective view 6930 and top view 6932 of sucha lamp. As shown in FIG. 69B, the lamp 69B00 comports to a form factorknown as PAR30L. The PAR30L form factor is further depicted by theprincipal views (e.g., left 6940, right 6936, back 6934, front 6938, andtop 6942) given in array 69C00 of FIG. 69C.

The components of the assembly 69A00 can be fitted together to form alamp. FIG. 69D depicts a perspective view 6944 and top view 6946 of sucha lamp. As shown in FIG. 69D, the lamp 69D00 comports to a form factorknown as PAR30S. The PAR30S form factor is further depicted by theprincipal views (e.g., left 6954, right 6950, back 6948, front 6952 andtop 6956) given in array 69E00 of FIG. 69E.

The components of the assembly 69A00 can be fitted together to form alamp. FIG. 69F depicts a perspective view 6958 and top view 6960 of sucha lamp. As shown in FIG. 69F, the lamp 69F00 comports to a form factorknown as PAR38. The PAR38 form factor is further depicted by theprincipal views (e.g., left 6968, right 6964, back 6962, front 6966 andtop 6970) given in array 69G00 of FIG. 69G.

The components of the assembly 69A00 can be fitted together to form alamp. FIG. 69H depicts a perspective view 6972 and top view 6974 of sucha lamp. As shown in FIG. 69H, the lamp 69H00 comports to a form factorknown as PAR111. The PAR111 form factor is further depicted by theprincipal views (e.g., left 6982, right 6978, back 6976, front 6980 andtop 6984) given in array 69I00 of FIG. 69I.

FIG. 70A through FIG. 70I depict embodiments of the present disclosureas can be applied toward lighting applications. In these embodiments,one or more light-emitting diodes 70A10, as taught by this disclosure,can be mounted on a submount or package to provide an electricalinterconnection. The submount or package can be a ceramic, oxide,nitride, semiconductor, metal, or combination thereof that includes anelectrical interconnection capability 70A20 for the various LEDs. Thesubmount or package can be mounted to a heatsink member 70B50 via athermal interface. The LEDs can be configured to produce a desiredemission spectrum, either by mixing primary emissions from various LEDs,or by having the LEDs photo-excite wavelength down-conversion materialssuch as phosphors, semiconductors, or semiconductor nanoparticles(“quantum dots”), or a combination of any of the foregoing.

The total light emitting surface (LES) of the LEDs and anydown-conversion materials can form a light source 70A30. One or morelight sources can be interconnected into an array 70B20, which in turnis in electrical contact with connectors 70B10 and brought into anassembly 70B30. One or more lens elements 70B40 can be optically coupledto the light source. The lens design and properties can be selected sothat the desired directional beam pattern for a lighting product isachieved for a given LES. The directional lighting product may be an LEDmodule, a retrofit lamp 70B70, or a lighting fixture 51C30. In the caseof a retrofit lamp, an electronic driver can be provided with asurrounding member 51B60, the driver to condition electrical power froman external source to render it suitable for the LED light source. Thedriver can be integrated into the retrofit lamp. In the case of afixture, an electronic driver is provided which conditions electricalpower from an external source to make it suitable for the LED lightsource, with the driver either integrated into the fixture or providedexternally to the fixture. In the case of a module, an electronic drivercan be provided to condition electrical power from an external source torender it suitable for the LED light source, with the driver eitherintegrated into the module or provided externally to the module.Examples of suitable external power sources include mains AC (e.g., 120Vrms AC or 240 Vrms AC), low-voltage AC (e.g., 12 VAC), and low-voltageDC (e.g., 12 VDC). In the case of retrofit lamps, the entire lightingproduct may be designed to fit standard form factors (e.g., ANSI formfactors). Examples of retrofit lamp products include LED-based MR16,PAR16, PAR20, PAR30, PAR38, BR30, A19 and various other lamp types.Examples of fixtures include replacements for halogen-based and ceramicmetal halide-based directional lighting fixtures.

In some embodiments, the present disclosure can be applied tonon-directional lighting applications. In these embodiments, one or morelight-emitting diodes (LEDs), as taught by the disclosure, can bemounted on a submount or package to provide an electricalinterconnection. The submount or package can be, for example, a ceramic,oxide, nitride, semiconductor, metal, or combination of any of theforegoing that includes electrical interconnection capability for thevarious LEDs. The submount or package can be mounted to a heatsinkmember via a thermal interface. The LEDs can be configured to produce adesired emission spectrum, either by mixing primary emissions fromvarious LEDs, or by having the LEDs photo-excite wavelengthdown-conversion materials such as phosphors, semiconductors, orsemiconductor nanoparticles (“quantum dots”), or a combination thereof.The LEDs can be distributed to provide a desired shape of the lightsource. For example, one common shape is a linear light source forreplacement of conventional fluorescent linear tube lamps. One or moreoptical elements can be coupled to the LEDs to provide a desirednon-directional light distribution. The non-directional lighting productmay be an LED module, a retrofit lamp, or a lighting fixture. In thecase of a retrofit lamp, an electronic driver can be provided tocondition electrical power from an external source to render it suitablefor the LED light source, with the driver integrated into the retrofitlamp. In the case of a fixture, an electronic driver is provided tocondition electrical power from an external source to render it suitablefor the LED light source, with the driver either integrated into thefixture or provided externally to the fixture. In the case of a module,an electronic driver can be provided to condition electrical power froman external source to render it suitable for the LED light source, withthe driver either integrated into the module or provided externally tothe module. Examples of external power sources include mains AC (e.g.,120 Vrms AC or 240 Vrms AC), low-voltage AC (e.g., 12 VAC), andlow-voltage DC (e.g., 12 VDC). In the case of retrofit lamps, the entirelighting product may be designed to fit standard form factors (e.g.,ANSI form factors). Examples of retrofit lamp products include LED-basedreplacements for various linear, circular, or curved fluorescent lamps.An example of a non-directional lighting product is shown in FIG. 70C.Such a lighting fixture can include replacements for fluorescent-basedtroffer luminaires. In this embodiment, LEDs are mechanically securedinto a package 70C10, and multiple packages are arranged into a suitableshape such as linear array 70C20, and/or a packaged LED can be fittedinto a housing to form a luminaire.

Some embodiments of the present disclosure can be applied tobacklighting for flat panel display applications. In these embodiments,one or more light-emitting diodes (LEDs), as taught by this disclosure,can be mounted on a submount or package to provide an electricalinterconnection. The submount or package can be a ceramic, oxide,nitride, semiconductor, metal, or combination of any of the foregoingthat include electrical interconnection capability for the various LEDs.The submount or package can be mounted to a heatsink member via athermal interface. The LEDs can be configured to produce a desiredemission spectrum, either by mixing primary emissions from various LEDs,or by having the LEDs photo-excite wavelength down-conversion materialssuch as phosphors, semiconductors, or semiconductor nanoparticles(“quantum dots”), or a combination of any of the foregoing. The LEDs canbe distributed to provide a desired shape of the light source. Onecommon shape is a linear light source. The light source can be opticallycoupled to a lightguide for the backlight. This can be achieved bycoupling at the edge of the lightguide (edge-lit), or by coupling lightfrom behind the lightguide (direct-lit). The lightguide distributeslight uniformly toward a controllable display such as a liquid crystaldisplay (LCD) panel. The display converts the LED light into desiredimages based on electrical control of light transmission and its color.One way to control the color is by use of filters (e.g., color filtersubstrate 70D40). Alternatively, multiple LEDs may be used and driven inpulsed mode to sequence the desired primary emission colors (e.g., usinga red LED 70D30, a green LED 70D10, and a blue LED 70D20). Optionalbrightness-enhancing films may be included in the backlight “stack”. Thebrightness-enhancing films narrow the flat panel display emission toincrease brightness at the expense of the observer viewing angle. Anelectronic driver can be provided to condition electrical power from anexternal source to render it suitable for the LED light source forbacklighting, including any color sequencing or brightness variation perLED location (e.g., one-dimensional or two-dimensional dimming).Examples of external power sources include mains AC (e.g., 120 Vrms ACor 240 Vrms AC), low-voltage AC (e.g., 12 VAC), and low-voltage DC(e.g., 12 VDC). Examples of backlighting products are shown in FIG.70D1, FIG. 70D2, FIG. 70E1 and FIG. 70E2.

Some embodiments of the present disclosure can be applied to automotiveforward lighting applications, as shown in FIG. 70F (e.g., see theexample of an automotive forward lighting product 70F30). In theseembodiments, one or more light-emitting diodes (LEDs) can be mounted ona submount or on a rigid or semi-rigid package 70F10 to provide anelectrical interconnection. The submount or package can be a ceramic,oxide, nitride, semiconductor, metal, or combination thereof, thatinclude electrical interconnection capability for the various LEDs. Thesubmount or package can be mounted to a heatsink member via a thermalinterface. The LEDs can be configured to produce a desired emissionspectrum, either by mixing primary emission from various LEDs, or byhaving the LEDs photo-excite wavelength down-conversion materials suchas phosphors, semiconductors, or semiconductor nanoparticles (“quantumdots”), or a combination of any of the foregoing. The total lightemitting surface (LES) of the LEDs and any down-conversion materialsform a light source. One or more lens elements 70F20 can be opticallycoupled to the light source. The lens design and properties can beselected to produce a desired directional beam pattern for an automotiveforward lighting application for a given LED. An electronic driver canbe provided to condition electrical power from an external source torender it suitable for the LED light source. Power sources forautomotive applications include low-voltage DC (e.g., 12 VDC). An LEDlight source may perform a high-beam function, a low-beam function, aside-beam function, or any combination thereof.

In some embodiments the present disclosure can be applied to digitalimaging applications such as illumination for mobile phone and digitalstill cameras (e.g., see FIG. 70G). In these embodiments, one or morelight-emitting diodes (LEDs), as taught by the disclosure, can bemounted on a submount or package 70G10 to provide an electricalinterconnection. The submount or package can be, for example, a ceramic,oxide, nitride, semiconductor, metal, or combination of any of theforegoing, that include electrical interconnection capability for thevarious LEDs. The submount or package can be mounted to a circuit boardmember and fitted with or into a mounting package 70G20. The LEDs can beconfigured to produce a desired emission spectrum, either by mixingprimary emission from various LEDs, or by having the LEDs photo-excitewavelength down-conversion materials such as phosphors, semiconductors,or semiconductor nanoparticles (“quantum dots”), or a combinationthereof. The total light emitting surface (LES) of the LEDs and anydown-conversion materials form a light source. One or more lens elementscan be optically coupled to the light source. The lens design andproperties can be selected so that the desired directional beam patternfor an imaging application is achieved for a given LES. An electronicdriver can be provided to condition electrical power from an externalsource to render it suitable for the LED light source. Examples ofsuitable external power sources for imaging applications includelow-voltage DC (e.g., 5 VDC). An LED light source may perform alow-intensity function 70G30, a high-intensity function 70G40, or anycombination thereof.

Some embodiments of the present disclosure can be applied to mobileterminal applications. FIG. 70H is a diagram illustrating a mobileterminal (see smart phone architecture 70H00). As shown, the smart phone70H06 includes a housing, display screen, and interface device, whichmay include a button, microphone, and/or touch screen.

FIG. 71 depicts a side view 7100 of a flip-chip on mirror configuration.The embodiment shown includes:

-   -   an electrically-conductive n-doped bulk GaN-containing substrate        7110 having a thickness 7112 (the shown thickness is over 20        microns thick);    -   an epitaxially-grown n-type layer 7114 overlying the substrate;    -   an epitaxially-grown active region 7116 overlying the        epitaxially-grown n-type layer;    -   an epitaxially-grown p-type layer 7118 overlying the        epitaxially-grown active region;    -   a p-contact 7120 overlying at least a portion of the p-type        layer;    -   an opening 7106 through the epitaxially-grown p-type layer and        active region that exposes the underlying n-type material;    -   an n-contact formed in the opening to provide an        electrically-conductive path to the substrate 7110;    -   a submount comprising at least a first conductive lower mirror        region (see first lower mirror region) and a second conductive        lower mirror region (see second lower mirror region) to provide        separate electrical connections to each of the n-contact and        p-contact respectively, and wherein the first conductive lower        mirror region and the second conductive lower mirror region are        electrically isolated (e.g., by a separation street);    -   an insulating layer (see insulating region 7102 ₁ and insulating        region 7102 ₂);    -   a third mirror region (see upper mirror layers) overlying the        gaps between the lower mirror regions to provide a higher        reflectivity than the submount;    -   a first metal containing composition in direct contact with at        least a portion of the first lower mirror region and in        electrical contact with the p-contact (see first        metal-containing composition); and    -   a second metal containing composition in direct contact with at        least a portion of the second lower mirror region and in        electrical contact with the n-contact (see second        metal-containing composition).

Also shown as pertaining to the LED device in FIG. 71 is a volume ofsolder material 7122 that is in direct contact with the p-contact toprovide electrical connection between the p-contact and the metalcomposition in contact with the first lower mirror region. Also, soldermaterial 7124 is in direct contact with the n-contact to provideelectrical connection between the n-contact and the metal composition incontact with the second lower mirror region.

Using any of the methods heretofore described, a material that has lowwettability for solder is deposited overlying a portion of the n-contactand in direct contact with the solder material such that when the soldermelts it is substantially removed onto the portion of the re-contactwithout the material, increasing its height. As shown, some of thematerial that has low wettability for solder is visible in at or nearthe interface between the solder and the n-contact (see feature 7104 ₁and feature 7104 ₂).

Finally, it should be noted that there are alternative ways ofimplementing the embodiments disclosed herein. Accordingly, the presentembodiments are to be considered as illustrative and not restrictive,and the claims are not to be limited to the details given herein, butmay be modified within the scope and equivalents thereof.

What is claimed is:
 1. A light emitting flip-chip on mirror apparatuscomprising: an electrically-conductive n-doped bulk GaN-containingsubstrate; an epitaxially-grown n-type layer overlying the substrate; anepitaxially-grown active region overlying the epitaxially-grown n-typelayer; an epitaxially-grown p-type layer overlying the epitaxially-grownactive region; an p-contact overlying at least a portion of theepitaxially-grown p-type layer; an opening through the epitaxially-grownp-type layer and the active region that exposes the n-type layer; ann-contact formed in the opening to provide an electrically-conductivepath to the GaN-containing substrate; and a submount comprising: asecond substrate; an insulating layer overlying the second substrate; atleast a first conductive lower mirror region and a second conductivelower mirror region overlying the insulating layer to provide separateelectrical connection to the n-contact and p-contact; a third mirrorregion overlying a gap between the first conductive lower mirror regionand the second conductive lower mirror to provide a higher reflectivitythan the submount; a first metal containing composition in directelectrical contact with at least a portion of the first lower mirrorregion and in direct electrical contact with the p-contact, and a secondmetal containing composition in direct electrical contact with at leasta portion of the second lower mirror region and in direct electricalcontact with the n-contact.
 2. The apparatus of claim 1, furthercomprising: a solder material in direct contact with the p-contact toprovide electrical connection between the p-contact and the first metalcontaining composition in contact with the first conductive lower mirrorregion, and a solder material in direct contact with the n-contact toprovide electrical connection between the n-contact and the second metalcontaining composition in contact with the second conductive lowermirror region.
 3. The apparatus of claim 2, further comprising amaterial that has low wettability for solder overlying a portion of then-contact that is in direct contact with the solder material.
 4. Theapparatus of claim 1, wherein the p-contact and the n-contact do notoverlap.
 5. The apparatus of claim 1, wherein the p-contact ischaracterized by a reflectivity greater than 90%.
 6. The apparatus ofclaim 1, wherein at least a portion of the first conductive lower mirrorregion is characterized by a reflectivity greater than 90%.
 7. Theapparatus of claim 1, wherein at least a portion of the secondconductive lower mirror region is characterized by a reflectivitygreater than 90%.
 8. The apparatus of claim 1, wherein at least one ofthe first conductive lower mirror region and the second conductive lowermirror region is characterized by a reflectivity greater than 90%. 9.The apparatus of claim 1, wherein the GaN-containing substrate comprisesa plurality of surfaces, and wherein at least one of the plurality ofsurfaces is roughened.
 10. The apparatus of claim 1, wherein at leastone of a top surface and a side surface of the GaN-containing substrateis roughened.
 11. The apparatus of claim 1, wherein at least one of thefirst conductive lower mirror region and the second conductive lowermirror region comprises a first dielectric stack.
 12. The apparatus ofclaim 11 where the first dielectric stack comprises at least one of,SiO_(x), SiN, TaO_(x), TiO_(x), NbO_(x), and TiNbO_(x).
 13. Theapparatus of claim 11, wherein the first dielectric stack comprises atleast two layers, wherein each of the at least two layers ischaracterized by a thickness from about 20 nm to about 500 nm.
 14. Theapparatus of claim 1, wherein the electrically-conductive n-doped bulkGaN-containing substrate has a thickness from about 20 microns thick toabout 200 microns thick.
 15. The apparatus of claim 1, wherein theelectrically-conductive n-doped bulk GaN-containing substrate is dopedwith a dopant concentration ranging from about 5 10¹⁷ cm⁻³ to about 10¹⁹cm⁻³.
 16. The apparatus of claim 1, wherein at least one of the firstconductive lower mirror region, the second conductive lower mirrorregion, and the third mirror region comprises at least one of Al and Ag.17. The apparatus of claim 1, wherein at least one of the p-contact andthe n-contact comprises at least one of Al and Ag.
 18. A lighting systemcomprising: a base member configurable to provide an electricalconnection to a power source; at least one light emitting diode die,electrically connected to the power source comprising: anelectrically-conductive n-doped bulk GaN-containing substrate that isgreater than or equal to 20 microns thick; an epitaxially-grown n-typelayer overlying the substrate; an epitaxially-grown active regionoverlying the epitaxially-grown n-type layer; an epitaxially-grownp-type layer overlying the epitaxially-grown active region; an p-contactoverlying at least a portion of the epitaxially-grown p-type layer; anopening through the epitaxially-grown p-type layer and the active regionthat exposes n-type material; an n-contact formed in the opening toprovide an electrically-conductive path to the substrate; a submountcomprising: and a second substrate; an insulating layer overlying thesecond substrate; at least a first conductive lower mirror region and asecond conductive lower mirror region overlying the insulating layer toprovide separate electrical connection to the n-contact and p-contact; athird mirror region overlying a gap between the first conductive lowermirror region and the second conductive lower mirror to provide a higherreflectivity than the submount; a first metal containing composition indirect electrical contact with at least a portion of the first lowermirror region and in direct electrical contact with the p-contact, and asecond metal containing composition in direct electrical contact with atleast a portion of the second lower mirror region and in directelectrical contact with the n-contact.
 19. The lighting system of claim18, further comprising a housing.
 20. The lighting system of claim 18,further comprising a heatsink coupled to the submount.